Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
1SV270
|
107Kb / 2P |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
|
1SV276
|
87Kb / 2P |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
|
1SV285
|
69Kb / 1P |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
|
1SV293
|
73Kb / 1P |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
|
1SV280
|
101Kb / 2P |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
|
KEC(Korea Electronics) |
KDV245
|
386Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
KDV273UL
|
431Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND
|
KDV245E
|
383Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
KDV257E
|
63Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KDV273E
|
63Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|