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STP16NM50N Datenblatt (PDF) - STMicroelectronics

STP16NM50N Datasheet PDF - STMicroelectronics
Teilenummer STP16NM50N
Download  STP16NM50N Download

Filegröße   554.68 Kbytes
Page   18 Pages
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Bauteilbeschribung N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STP16NM50N Datasheet (PDF)

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STP16NM50N Datasheet PDF - STMicroelectronics

Teilenummer STP16NM50N
Download  STP16NM50N Click to download

Filegröße   554.68 Kbytes
Page   18 Pages
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Bauteilbeschribung N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STP16NM50N Datenblatt (HTML) - STMicroelectronics

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STP16NM50N Produktdetails

Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications




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Über STMicroelectronics


Stmicroelectronics ist ein multinationaler Elektronik- und Halbleiterhersteller mit Sitz in Genf, Schweiz.

Das Unternehmen bietet eine breite Palette von Produkten an, darunter Mikrocontroller, Sensoren, Stromverstärker und integrierte Schaltkreise für verschiedene Anwendungen in den Märkten Automobil-, Industrie- und Verbrauchermärkte.

STMICROELECTRONICS wurde 1987 gegründet und ist in über 100 Ländern betrieben und ist eines der größten Halbleiterunternehmen der Welt.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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