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2N3649 Datenblatt (PDF) - New Jersey Semi-Conductor Products, Inc.

2N3649 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
Teilenummer 2N3649
Download  2N3649 Download

Filegröße   88.97 Kbytes
Page   1 Pages
Hersteller  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Bauteilbeschribung SCR, V(DRM) = 50V TO 99.9V

2N3649 Datasheet (PDF)

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2N3649 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

Teilenummer 2N3649
Download  2N3649 Click to download

Filegröße   88.97 Kbytes
Page   1 Pages
Hersteller  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Bauteilbeschribung SCR, V(DRM) = 50V TO 99.9V

2N3649 Datenblatt (HTML) - New Jersey Semi-Conductor Products, Inc.

2N3649 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.

2N3649 Produktdetails

SCR

C140 and C141 Series of Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices designed primarily for high-frequency power switching applications which require blocking voltages up to 400 volts and load currents up to 35 amperes RMS, at frequencies up to 25 kHz.

The C140 and C141 Series feature:
• Contoured junction surfaces for high-voltage stability
• Shorted emitters for high dv/dt (200V/μsec)
• Distributed gates for high di/dt (400A//μsec)




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