2N4190 Datenblatt(PDF)

Datenblatt-Suchmaschine für elektronische Bauteile

2N4190 Datenblatt (PDF) - New Jersey Semi-Conductor Products, Inc.

2N4190 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


Teilenummer	2N4190

Download	2N4190 Download

Filegröße	114.51 Kbytes

Page	1 Pages

Hersteller	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

Direct Link	http://www.njsemi.com

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Bauteilbeschribung

SCR, V(DRM) = 600V TO 699.9V

2N4190 Datasheet (PDF)

Download Datenblatt


Teilenummer	2N4190

Download	2N4190 Click to download

Filegröße	114.51 Kbytes

Page	1 Pages

Hersteller	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

Direct Link	http://www.njsemi.com

Logo

Bauteilbeschribung	SCR, V(DRM) = 600V TO 699.9V

2N4190 Datenblatt (HTML) - New Jersey Semi-Conductor Products, Inc.

2N4190 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.

2N4190 Produktdetails

Silicon Controlled Rectifiers Reverse Blocking Trlode Thyristors

and military applications. Offered In a choice of space-saving, economical packages for mounting versatility.

• Uniform Low-Level Noise-Immune Gate Triggering — IGT = 10 mA (Typ) @ TC = 25°C
• Low Forward "On" Voltage — VT - 1 V (Typ) @ 5 Amp @ 25°C
• High Surge-Current Capability — ITSM = 100 Amp Peak
• Shorted Emitter Construction

Ähnliche Beschreibung - 2N4190

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
New Jersey Semi-Conduct...	2N4174	131Kb / 1P	SCR, V(DRM) == 600V TO 699.9V
	2N4101	95Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N5171	109Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4166	108Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4102	115Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N4444	116Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N6174	96Kb / 1P	SCR, V(DRM) = 600V TO 699.9V
	2N5443	115Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V
	2N5446	135Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V
	2N5809	76Kb / 1P	TRIAC, V(DRM) = 600V TO 699.9V

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