General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Features

• 5.5 A, 30 V.  RDS(ON)= 30 mΩ@ VGS= 4.5 V

                   RDS(ON)= 26 mΩ@ VGS= 10 V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge (13 nC typical)

• High power and current handling capability