Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Panasonic Semiconductor |
MA3X727
|
350Kb / 3P |
Silicon epitaxial planar type For super high speed switching For small current rectification
|
KEC(Korea Electronics) |
KDR732
|
391Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED RECTIFICATION)
|
Leshan Radio Company |
LRB520S-30T1G
|
507Kb / 3P |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
LRB521S-30T1G
|
453Kb / 3P |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
LRB521S-40T1G
|
614Kb / 4P |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
KEC(Korea Electronics) |
KDR701S
|
384Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Leshan Radio Company |
LBAS170HT1G
|
169Kb / 3P |
SCHOTTKY BARRIER DIODE Schottky diode for high-speed switching
|
KEC(Korea Electronics) |
KDR411
|
384Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
KDR411S
|
384Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
KDR412
|
388Kb / 2P |
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|