# 2SA671 Silicon PNP Power Transistor

## Description
️· Complement to Type 2SC1061
️· Applications: Low frequency power amplifier circuits
️· Features:
- Low Collector Saturation Voltage: VCE(SUS) = -1.0V (Max) @ Ic = -2.0A
- DC Current Gain: hFE = 35-320 @ Ic = -0.5A

## Absolute Maximum Ratings
️· VCBO: -50 V
️· Vceo: -50 V
️· VEBO: -4 V
️· Ic: -3 A
️· ICM: -6 A
️· IB: -0.5 A
️· PC: 25 W @ TC=25°C
️· Tj: 150 °C
️· Tstg: -55 to 150 °C

## Thermal Characteristics
️· Rth j-c: 5.0 °C/W

## Electrical Characteristics
️· V(BR)CEO: -50 V
️· V(BR)EBO: -7 V
️· VCE(sat): -1.0 to -1.5 V @ Ic = -2A, Ib = -0.2A
️· VBE(ON): 0.6 to 1.5 V @ Ic = -1A, VCE = -4V
️· ICBO: 5 uA (max) @ VCB = -25V, IE = 0
️· IEBO: 0.6 uA (max) @ VEB = -4V, Ic = 0
️· hFE:
- 35-70 (Class A)
- 60-120 (Class B)
- 100-200 (Class C)
- 160-320 (Class D)
️· fT: Current-Gain — Bandwidth Product at 1 MHz