# MOSPEC Switchmode Series NPN Silicon Transistors

## General Description
️· Designed for high-voltage, high-speed, power switching in inductive circuits.
️· Suitable for line-operated switchmode applications.
️· Applications include: switching regulators, inverters, solenoid/relay drivers, motor controls, and deflection circuits.

## Key Features
️· Fast Turn-off Times: 400ns inductive fall time, 2.5us inductive storage time.
️· Operating Temperature Range: -65°C to +200°C.
️· 100°C performance specifications for reversed biased SOA, switching times, and leakage currents.

## Maximum Ratings

Rating	Symbol	MJ13332	MJ13333	MJ13334	MJ13335	Unit
Collector-Emitter Voltage (VCEV)		650	700	750	800	V
Collector-Emitter Voltage (VCEO)		350	400	450	500	V
Emitter-Base Voltage (VEB)		6.0	6.0	6.0	6.0	V
Collector Current (Continuous/Peak) (IC/ICM)		20/30	20/30	20/30	20/30	A
Base Current (IB)		10	10	10	10	A
Power Dissipation (PD)		275 W, 1.0 W/oC	275 W, 1.0 W/oC	275 W, 1.0 W/oC	275 W, 1.0 W/oC	Watts/W/oC
Junction/Storage Temperature Range (TJ/TSTG)		-65 to +200°C	-65 to +200°C	-65 to +200°C	-65 to +200°C	°C

## Thermal Characteristics
️· Thermal Resistance to Case (RθJC): 1.0 °C/W

## Physical Characteristics
️· TO-3 Package
️· Dimensions (in millimeters):
- A: 38.75 - 39.96
- B: 19.28 - 22.23
- C: 7.96 - 9.28
- D: 11.18 - 12.19
- E: 25.20 - 26.67
- F: 0.92 - 1.09
- G: 1.38 - 1.62
- H: 29.90 - 30.40
- I: 16.64 - 17.30
- J: 3.88 - 4.36
- K: 10.67 - 11.18

## Electrical Characteristics (Typical Values)
️· Collector-Emitter Sustaining Voltage: VCEO(sus) varies from 350V to 500V (depending on model).
️· Emitter Cutoff Current: IEBO, approximately 1.0 mA.
️· DC Current Gain (hFE): Varies from 10 to 60.
️· Collector-Emitter Saturation Voltage (VCE(sat)): Approximately 1.8V - 5.0V.
️· Base-Emitter Saturation Voltage (VBE(sat)): Approximately 1.8V.
️· Output Capacitance: 125 pF.

## Switching Characteristics
️· Delay Time: Approximately 0.1 µs.
️· Rise Time: Approximately 0.7 µs.
️· Storage Time: Approximately 4.0 µs.
️· Fall Time: Approximately 0.7 µs.

## Notes:
️· Pulse test conditions: Pulse Width = 300 seconds, Duty Cycle ≤ 2.0%.