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Hello, Please ask a question about HMS65N03Q Datasheet
# Example questions:
➢ What is the thermal resistance from junction to case (rθjc) and how does this value affect the device's thermal performance?
➢ What is the maximum drain current (id) this mosfet can continuously handle under normal operating conditions?
➢ What is the typical gate threshold voltage (vgs(th))?
1. Product Identification:
️· Part Number: DFN3.3X3.3-8L (This refers to the package type)
️· Likely a MOSFET: The terminology (VDS, VGS, RDS(on), Qg) strongly suggests this is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
2. Absolute Maximum Ratings:
These are the stress levels that the device can *withstand* without permanent damage.
️· VDS (Drain-Source Voltage): 30V
️· VGS (Gate-Source Voltage): ±20V
️· ID (Drain Current - Continuous): 65A
️· ID (Drain Current - Continuous at 100°C): 45.5A (Lower current is allowed at higher temperatures)
️· IDM (Pulsed Drain Current): 260A
️· PD (Maximum Power Dissipation): 55W
️· EAS (Single Pulse Avalanche Energy): 500mJ
️· TJ (Junction Temperature): -55°C to 150°C
3. Thermal Characteristics:
️· RθJC (Junction-to-Case Thermal Resistance): 2.3 °C/W – This is a measure of how effectively heat is dissipated from the chip to the package. A lower value is better.
4. Electrical Characteristics:
These specify the typical and limits of how the device *operates*.
️· Off Characteristics: Define how the transistor blocks current when it's supposed to be off.
- BVDSS (Drain-Source Breakdown Voltage): 30V
- IDSS (Zero Gate Voltage Drain Current): 1μA (max)
- IGSS (Gate-Body Leakage Current): ±100nA (max)
️· On Characteristics: Define how the transistor conducts current when it's turned on.
- VGS(th) (Gate-Source Threshold Voltage): 1.0V to 2.0V (the voltage needed to start the transistor conducting)
- RDS(on) (Drain-Source On-Resistance): 1.9Ω to 3.6Ω (Lower is better; less power is lost as heat.)
️· Dynamic Characteristics: Describe switching behavior (how fast it turns on/off). These include capacitance values (Clss, Coss, Crss) and switching times (td(on), tr).
️· Drain-Source Diode Characteristics: These are parameters related to the body diode inherent in the MOSFET.
5. Package Information (DFN3.3x3.3-8L):
This is a table of dimensions for the package. Key dimensions include:
️· A: 0.70mm - 0.80mm
️· D: 3.25mm - 3.45mm
️· E: 3.20mm - 3.40mm
️· e: 0.65mm (pitch)
️· L: 0.30mm - 0.50mm
Important Notes:
️· Datasheet: This information *should* be extracted from a full datasheet. A datasheet will have much more detail, graphs, application circuits, and reliability data.
️· Application: This device is likely used in switching power supplies, motor control, load switching, and other power-conversion applications.
1. Product Identification:
️· Part Number: DFN3.3X3.3-8L (This refers to the package type)
️· Likely a MOSFET: The terminology (VDS, VGS, RDS(on), Qg) strongly suggests this is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
2. Absolute Maximum Ratings:
These are the stress levels that the device can *withstand* without permanent damage.
️· VDS (Drain-Source Voltage): 30V
️· VGS (Gate-Source Voltage): ±20V
️· ID (Drain Current - Continuous): 65A
️· ID (Drain Current - Continuous at 100°C): 45.5A (Lower current is allowed at higher temperatures)
️· IDM (Pulsed Drain Current): 260A
️· PD (Maximum Power Dissipation): 55W
️· EAS (Single Pulse Avalanche Energy): 500mJ
️· TJ (Junction Temperature): -55°C to 150°C
3. Thermal Characteristics:
️· RθJC (Junction-to-Case Thermal Resistance): 2.3 °C/W – This is a measure of how effectively heat is dissipated from the chip to the package. A lower value is better.
4. Electrical Characteristics:
These specify the typical and limits of how the device *operates*.
️· Off Characteristics: Define how the transistor blocks current when it's supposed to be off.
- BVDSS (Drain-Source Breakdown Voltage): 30V
- IDSS (Zero Gate Voltage Drain Current): 1μA (max)
- IGSS (Gate-Body Leakage Current): ±100nA (max)
️· On Characteristics: Define how the transistor conducts current when it's turned on.
- VGS(th) (Gate-Source Threshold Voltage): 1.0V to 2.0V (the voltage needed to start the transistor conducting)
- RDS(on) (Drain-Source On-Resistance): 1.9Ω to 3.6Ω (Lower is better; less power is lost as heat.)
️· Dynamic Characteristics: Describe switching behavior (how fast it turns on/off). These include capacitance values (Clss, Coss, Crss) and switching times (td(on), tr).
️· Drain-Source Diode Characteristics: These are parameters related to the body diode inherent in the MOSFET.
5. Package Information (DFN3.3x3.3-8L):
This is a table of dimensions for the package. Key dimensions include:
️· A: 0.70mm - 0.80mm
️· D: 3.25mm - 3.45mm
️· E: 3.20mm - 3.40mm
️· e: 0.65mm (pitch)
️· L: 0.30mm - 0.50mm
Important Notes:
️· Datasheet: This information *should* be extracted from a full datasheet. A datasheet will have much more detail, graphs, application circuits, and reliability data.
️· Application: This device is likely used in switching power supplies, motor control, load switching, and other power-conversion applications.
| Part No. | HMS65N03Q |
| Manufacturer | HMSEMI |
| Size | 524 Kbytes |
| Pages | 5 pages |
| Description | N-Channel Super Trench Power MOSFET |
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