Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

HMS65N03Q Datasheet with Chat AI
  • AIauthorized

    Hello, Please ask a question about HMS65N03Q Datasheet

  • # Example questions: ➢ What is the thermal resistance from junction to case (rθjc) and how does this value affect the device's thermal performance?
    ➢ What is the maximum drain current (id) this mosfet can continuously handle under normal operating conditions?
    ➢ What is the typical gate threshold voltage (vgs(th))?

  • Part No.HMS65N03Q
    ManufacturerHMSEMI
    Size524 Kbytes
    Pages5 pages
    DescriptionN-Channel Super Trench Power MOSFET
    Datasheet Summary with AI

    1. Product Identification:

    ️· Part Number: DFN3.3X3.3-8L (This refers to the package type)
    ️· Likely a MOSFET: The terminology (VDS, VGS, RDS(on), Qg) strongly suggests this is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

    2. Absolute Maximum Ratings:

    These are the stress levels that the device can *withstand* without permanent damage.

    ️· VDS (Drain-Source Voltage): 30V
    ️· VGS (Gate-Source Voltage): ±20V
    ️· ID (Drain Current - Continuous): 65A
    ️· ID (Drain Current - Continuous at 100°C): 45.5A (Lower current is allowed at higher temperatures)
    ️· IDM (Pulsed Drain Current): 260A
    ️· PD (Maximum Power Dissipation): 55W
    ️· EAS (Single Pulse Avalanche Energy): 500mJ
    ️· TJ (Junction Temperature): -55°C to 150°C

    3. Thermal Characteristics:

    ️· RθJC (Junction-to-Case Thermal Resistance): 2.3 °C/W – This is a measure of how effectively heat is dissipated from the chip to the package. A lower value is better.

    4. Electrical Characteristics:

    These specify the typical and limits of how the device *operates*.

    ️· Off Characteristics: Define how the transistor blocks current when it's supposed to be off.
    - BVDSS (Drain-Source Breakdown Voltage): 30V
    - IDSS (Zero Gate Voltage Drain Current): 1μA (max)
    - IGSS (Gate-Body Leakage Current): ±100nA (max)
    ️· On Characteristics: Define how the transistor conducts current when it's turned on.
    - VGS(th) (Gate-Source Threshold Voltage): 1.0V to 2.0V (the voltage needed to start the transistor conducting)
    - RDS(on) (Drain-Source On-Resistance): 1.9Ω to 3.6Ω (Lower is better; less power is lost as heat.)
    ️· Dynamic Characteristics: Describe switching behavior (how fast it turns on/off). These include capacitance values (Clss, Coss, Crss) and switching times (td(on), tr).
    ️· Drain-Source Diode Characteristics: These are parameters related to the body diode inherent in the MOSFET.

    5. Package Information (DFN3.3x3.3-8L):

    This is a table of dimensions for the package. Key dimensions include:

    ️· A: 0.70mm - 0.80mm
    ️· D: 3.25mm - 3.45mm
    ️· E: 3.20mm - 3.40mm
    ️· e: 0.65mm (pitch)
    ️· L: 0.30mm - 0.50mm

    Important Notes:

    ️· Datasheet: This information *should* be extracted from a full datasheet. A datasheet will have much more detail, graphs, application circuits, and reliability data.
    ️· Application: This device is likely used in switching power supplies, motor control, load switching, and other power-conversion applications.

    1. Product Identification:

    ️· Part Number: DFN3.3X3.3-8L (This refers to the package type)
    ️· Likely a MOSFET: The terminology (VDS, VGS, RDS(on), Qg) strongly suggests this is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

    2. Absolute Maximum Ratings:

    These are the stress levels that the device can *withstand* without permanent damage.

    ️· VDS (Drain-Source Voltage): 30V
    ️· VGS (Gate-Source Voltage): ±20V
    ️· ID (Drain Current - Continuous): 65A
    ️· ID (Drain Current - Continuous at 100°C): 45.5A (Lower current is allowed at higher temperatures)
    ️· IDM (Pulsed Drain Current): 260A
    ️· PD (Maximum Power Dissipation): 55W
    ️· EAS (Single Pulse Avalanche Energy): 500mJ
    ️· TJ (Junction Temperature): -55°C to 150°C

    3. Thermal Characteristics:

    ️· RθJC (Junction-to-Case Thermal Resistance): 2.3 °C/W – This is a measure of how effectively heat is dissipated from the chip to the package. A lower value is better.

    4. Electrical Characteristics:

    These specify the typical and limits of how the device *operates*.

    ️· Off Characteristics: Define how the transistor blocks current when it's supposed to be off.
    - BVDSS (Drain-Source Breakdown Voltage): 30V
    - IDSS (Zero Gate Voltage Drain Current): 1μA (max)
    - IGSS (Gate-Body Leakage Current): ±100nA (max)
    ️· On Characteristics: Define how the transistor conducts current when it's turned on.
    - VGS(th) (Gate-Source Threshold Voltage): 1.0V to 2.0V (the voltage needed to start the transistor conducting)
    - RDS(on) (Drain-Source On-Resistance): 1.9Ω to 3.6Ω (Lower is better; less power is lost as heat.)
    ️· Dynamic Characteristics: Describe switching behavior (how fast it turns on/off). These include capacitance values (Clss, Coss, Crss) and switching times (td(on), tr).
    ️· Drain-Source Diode Characteristics: These are parameters related to the body diode inherent in the MOSFET.

    5. Package Information (DFN3.3x3.3-8L):

    This is a table of dimensions for the package. Key dimensions include:

    ️· A: 0.70mm - 0.80mm
    ️· D: 3.25mm - 3.45mm
    ️· E: 3.20mm - 3.40mm
    ️· e: 0.65mm (pitch)
    ️· L: 0.30mm - 0.50mm

    Important Notes:

    ️· Datasheet: This information *should* be extracted from a full datasheet. A datasheet will have much more detail, graphs, application circuits, and reliability data.
    ️· Application: This device is likely used in switching power supplies, motor control, load switching, and other power-conversion applications.

    Part No.HMS65N03Q
    ManufacturerHMSEMI
    Size524 Kbytes
    Pages5 pages
    DescriptionN-Channel Super Trench Power MOSFET
    War ALLDATASHEET hilfreich?  [ DONATE ] 

    Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
    All Rights Reserved©Alldatasheet.com


    Mirror Sites
    English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
    Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
    Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
    Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
    Family Site : ic2ic.com  |   icmetro.com