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Hello, Please ask a question about APM2701AC Datasheet
# Example questions:
➢ Compare and contrast the 'on-resistance vs. drain current' graphs for both n-channel and p-channel devices. how does drain current affect on-resistance for each, and what might this imply about their performance in different applications?
➢ Referring to the 'single pulse power (junction-to-ambient)' graph, what does the x-axis represent and what does this graph illustrate about the device's thermal characteristics?
➢ What are the key differences between the p-channel and n-channel mosfets (apm2701ac) in terms of the presented graphs (e.g., what type of graphs are unique to each)?
# APM2701AC MOSFET Datasheet Summary
## Features & General Information
️· Type: N- and P-Channel TrenchFET® Power MOSFET
️· Compliance: RoHS Directive 2002/95/EC, Halogen-Free (IEC 61249-2-21)
️· Package: TSOP-6
️· Datasheet Source: www.VBsemi.tw
## Electrical Characteristics - N-Channel
️· VDS (Drain-Source Voltage): 20V
️· RDS(on) (Drain-Source On-Resistance):
- 0.024Ω @ VGS = 10V, ID = 2.5A
- 0.036Ω @ VGS = 4.5V, ID = 2.0A
️· ID (Continuous Drain Current):
- 5.0A @ TJ = 25°C
- 4.0A @ TJ = 70°C
️· VGS(th) (Gate Threshold Voltage): 0.6V @ ID = 250µA
️· Power Dissipation (PD): 1.15W @ TA = 25°C, 0.73W @ TA = 70°C
## Electrical Characteristics - P-Channel
️· VDS (Drain-Source Voltage): -20V
️· RDS(on) (Drain-Source On-Resistance):
- 0.069Ω @ VGS = -10V, ID = -1.8A
- 0.083Ω @ VGS = -4.5V, ID = -1.2A
️· ID (Continuous Drain Current):
- -3.4A @ TJ = 25°C
- -2.3A @ TJ = 70°C
️· VGS(th) (Gate Threshold Voltage): -0.7V @ ID = -250µA
## Thermal Resistance
️· RthJA (Junction-to-Ambient): 93-110°C/W
️· RthJL (Junction-to-Lead): 75-90°C/W
## Absolute Maximum Ratings
️· VDS (N-Channel/P-Channel): ±20V
️· VGS (N-Channel/P-Channel): ±20V
️· Operating/Storage Temperature: -55°C to +150°C
## Package Dimensions & Pad Layout
️· Package Type: TSOP-6 (Dimensions provided in datasheet)
️· Recommended Pad Layout: Provided in datasheet.
# APM2701AC MOSFET Datasheet Summary
## Features & General Information
️· Type: N- and P-Channel TrenchFET® Power MOSFET
️· Compliance: RoHS Directive 2002/95/EC, Halogen-Free (IEC 61249-2-21)
️· Package: TSOP-6
️· Datasheet Source: www.VBsemi.tw
## Electrical Characteristics - N-Channel
️· VDS (Drain-Source Voltage): 20V
️· RDS(on) (Drain-Source On-Resistance):
- 0.024Ω @ VGS = 10V, ID = 2.5A
- 0.036Ω @ VGS = 4.5V, ID = 2.0A
️· ID (Continuous Drain Current):
- 5.0A @ TJ = 25°C
- 4.0A @ TJ = 70°C
️· VGS(th) (Gate Threshold Voltage): 0.6V @ ID = 250µA
️· Power Dissipation (PD): 1.15W @ TA = 25°C, 0.73W @ TA = 70°C
## Electrical Characteristics - P-Channel
️· VDS (Drain-Source Voltage): -20V
️· RDS(on) (Drain-Source On-Resistance):
- 0.069Ω @ VGS = -10V, ID = -1.8A
- 0.083Ω @ VGS = -4.5V, ID = -1.2A
️· ID (Continuous Drain Current):
- -3.4A @ TJ = 25°C
- -2.3A @ TJ = 70°C
️· VGS(th) (Gate Threshold Voltage): -0.7V @ ID = -250µA
## Thermal Resistance
️· RthJA (Junction-to-Ambient): 93-110°C/W
️· RthJL (Junction-to-Lead): 75-90°C/W
## Absolute Maximum Ratings
️· VDS (N-Channel/P-Channel): ±20V
️· VGS (N-Channel/P-Channel): ±20V
️· Operating/Storage Temperature: -55°C to +150°C
## Package Dimensions & Pad Layout
️· Package Type: TSOP-6 (Dimensions provided in datasheet)
️· Recommended Pad Layout: Provided in datasheet.
| Part No. | APM2701AC |
| Manufacturer | VBSEMI |
| Size | 2Mb |
| Pages | 10 pages |
| Description | N- and P-Channel V (D-S) MOSFET |
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