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APM2701AC Datasheet with Chat AI
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  • # Example questions: ➢ Compare and contrast the 'on-resistance vs. drain current' graphs for both n-channel and p-channel devices. how does drain current affect on-resistance for each, and what might this imply about their performance in different applications?
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  • Part No.APM2701AC
    ManufacturerVBSEMI
    Size2Mb
    Pages10 pages
    DescriptionN- and P-Channel V (D-S) MOSFET
    Datasheet Summary with AI

    # APM2701AC MOSFET Datasheet Summary

    ## Features & General Information

    ️· Type: N- and P-Channel TrenchFET® Power MOSFET
    ️· Compliance: RoHS Directive 2002/95/EC, Halogen-Free (IEC 61249-2-21)
    ️· Package: TSOP-6
    ️· Datasheet Source: www.VBsemi.tw

    ## Electrical Characteristics - N-Channel

    ️· VDS (Drain-Source Voltage): 20V
    ️· RDS(on) (Drain-Source On-Resistance):
    - 0.024Ω @ VGS = 10V, ID = 2.5A
    - 0.036Ω @ VGS = 4.5V, ID = 2.0A
    ️· ID (Continuous Drain Current):
    - 5.0A @ TJ = 25°C
    - 4.0A @ TJ = 70°C
    ️· VGS(th) (Gate Threshold Voltage): 0.6V @ ID = 250µA
    ️· Power Dissipation (PD): 1.15W @ TA = 25°C, 0.73W @ TA = 70°C

    ## Electrical Characteristics - P-Channel

    ️· VDS (Drain-Source Voltage): -20V
    ️· RDS(on) (Drain-Source On-Resistance):
    - 0.069Ω @ VGS = -10V, ID = -1.8A
    - 0.083Ω @ VGS = -4.5V, ID = -1.2A
    ️· ID (Continuous Drain Current):
    - -3.4A @ TJ = 25°C
    - -2.3A @ TJ = 70°C
    ️· VGS(th) (Gate Threshold Voltage): -0.7V @ ID = -250µA

    ## Thermal Resistance

    ️· RthJA (Junction-to-Ambient): 93-110°C/W
    ️· RthJL (Junction-to-Lead): 75-90°C/W

    ## Absolute Maximum Ratings

    ️· VDS (N-Channel/P-Channel): ±20V
    ️· VGS (N-Channel/P-Channel): ±20V
    ️· Operating/Storage Temperature: -55°C to +150°C

    ## Package Dimensions & Pad Layout

    ️· Package Type: TSOP-6 (Dimensions provided in datasheet)
    ️· Recommended Pad Layout: Provided in datasheet.

    # APM2701AC MOSFET Datasheet Summary

    ## Features & General Information

    ️· Type: N- and P-Channel TrenchFET® Power MOSFET
    ️· Compliance: RoHS Directive 2002/95/EC, Halogen-Free (IEC 61249-2-21)
    ️· Package: TSOP-6
    ️· Datasheet Source: www.VBsemi.tw

    ## Electrical Characteristics - N-Channel

    ️· VDS (Drain-Source Voltage): 20V
    ️· RDS(on) (Drain-Source On-Resistance):
    - 0.024Ω @ VGS = 10V, ID = 2.5A
    - 0.036Ω @ VGS = 4.5V, ID = 2.0A
    ️· ID (Continuous Drain Current):
    - 5.0A @ TJ = 25°C
    - 4.0A @ TJ = 70°C
    ️· VGS(th) (Gate Threshold Voltage): 0.6V @ ID = 250µA
    ️· Power Dissipation (PD): 1.15W @ TA = 25°C, 0.73W @ TA = 70°C

    ## Electrical Characteristics - P-Channel

    ️· VDS (Drain-Source Voltage): -20V
    ️· RDS(on) (Drain-Source On-Resistance):
    - 0.069Ω @ VGS = -10V, ID = -1.8A
    - 0.083Ω @ VGS = -4.5V, ID = -1.2A
    ️· ID (Continuous Drain Current):
    - -3.4A @ TJ = 25°C
    - -2.3A @ TJ = 70°C
    ️· VGS(th) (Gate Threshold Voltage): -0.7V @ ID = -250µA

    ## Thermal Resistance

    ️· RthJA (Junction-to-Ambient): 93-110°C/W
    ️· RthJL (Junction-to-Lead): 75-90°C/W

    ## Absolute Maximum Ratings

    ️· VDS (N-Channel/P-Channel): ±20V
    ️· VGS (N-Channel/P-Channel): ±20V
    ️· Operating/Storage Temperature: -55°C to +150°C

    ## Package Dimensions & Pad Layout

    ️· Package Type: TSOP-6 (Dimensions provided in datasheet)
    ️· Recommended Pad Layout: Provided in datasheet.

    Part No.APM2701AC
    ManufacturerVBSEMI
    Size2Mb
    Pages10 pages
    DescriptionN- and P-Channel V (D-S) MOSFET
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