# isc N-Channel MOSFET Transistor AOW296

## Features
· Drain Current: I D = 70A @ T C = 25℃
· Drain-Source Voltage: V DSS = 100V (Min)
· Gate-Source Voltage: ±20V
· Static Drain-Source On-Resistance: R DS(on) = 9.7mΩ (Max)
· 100% avalanche tested
· Minimum lot-to-lot variations
· Suitable for synchronous rectification

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current-Continuous	70	A
IDM	Drain Current-Single Pulsed	180	A
PD	Total Dissipation @TC=25℃	104	W
Tj	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth(ch-c)	Channel-to-case thermal resistance	1.2	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
BVDSS	Drain-Source Breakdown Voltage	VGS=0V; ID = 250μA	100		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID = 250μA	2.3	3.4	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=20A<br>VGS=10V; ID=20A;TJ=125℃		9.7<br>16.6	mΩ
IGSS	Gate-Source Leakage Current	VGS=±20V;VDS=0V		±100	nA
IDSS	Drain-Source Leakage Current	VDS=100V;VGS=0V<br>VDS=100V;VGS=0V;TJ=55℃		1<br>5	μA
VSD	Diode forward voltage	Is=1A; VGS =0V		1	V

## Important Notices
· ISC reserves the right to make changes without notification.
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous environments.
· ISC makes no warranty or guarantee regarding product suitability.
· ISC disclaims liability for product application or use.