# isc N-Channel MOSFET Transistor FS2ASJ-3

## Features

· Drain Current (ID): 2A @ TC=25℃
· Drain-Source Voltage (VDSS): 150V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 0.75Ω (Max) @ VGS=10V
· 100% avalanche tested
· Minimum lot-to-lot variations

## Description

· Suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	150	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	2	A
IDM	Drain Current-Single Pluse	8	A
PD	Total Dissipation @TC=25℃	20	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	6.25	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 1mA	150	--	V
VGS(th)	Gate Threshold Voltage	VDS= 10V; ID=1mA	1	2	V
RDS(on)1	Drain-Source On-Resistance	VGS= 10V; ID=1A	--	0.75	Ω
RDS(on)2	Drain-Source On-Resistance	VGS= 4V; ID=1A	--	0.81	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0	--	±0.1	uA
IDSS	Zero Gate Voltage Drain Current	VDS=150V; VGS= 0	--	0.1	mA
VSD	Forward On-Voltage	IS=1A; VGS= 0	--	1.5	V

## Notice

· ISC website: www.iscsemi.com
· ISC and iscsemi are registered trademarks
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous environments (aerospace, medical).
· ISC makes no warranty or assumes liability regarding product suitability or use.