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Hello, Please ask a question about PH2369 Datasheet
# Example questions:
➢ What is the maximum continuous collector current (ic) that the ph2369 transistor can handle?
➢ What is the typical operating junction temperature range (tj) within which the ph2369 transistor is designed to function?
➢ How does the dc current gain (hfe) vary with collector current, considering the provided values for hfe1 and hfe2?
# PH2369 NPN Transistor
## Features
️· TO-92 Package: Standard TO-92 outline.
️· Collector-Base Breakdown Voltage (VCBO): 40V
️· Collector-Emitter Breakdown Voltage (VCEO): 15V
️· Emitter-Base Breakdown Voltage (VEBO): 4.5V
️· Continuous Collector Current (IC): 0.2A
️· Collector Power Dissipation (PC): 500mW
️· Junction and Storage Temperature Range: -55°C to 150°C
## Ordering Information
| Part Number | Package | Packing Method | Pack Quantity |
|---|---|---|---|
| PH2369 | TO-92 | Bulk | 1000pcs/Bag |
| PH2369-TA | TO-92 | Tape | 2000pcs/Box |
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| DC Current Gain (hFE1) | VCE= 1V, IC= 10mA | 40 | 120 | ||
| DC Current Gain (hFE2) | VCE= 2V, IC= 100mA | 20 | |||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=10mA, IB=1mA | 0.25 | V | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=10mA, IB=1mA | 0.7 | 0.85 | V | |
| Transition Frequency (fT) | VCE= 10V, IC=10mA | 500 | MHz | ||
| Collector Capacitance (Cc) | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| Emitter Capacitance (Ce) | VEB=1V, IE=0, f=1MHz | 4.5 | pF | ||
| Turn-on Time (ton) | VCC=3V, IC=10mA, IB1= 3mA | 10 | ns | ||
| Turn-off Time (toff) | 20 | ns |
# PH2369 NPN Transistor
## Features
️· TO-92 Package: Standard TO-92 outline.
️· Collector-Base Breakdown Voltage (VCBO): 40V
️· Collector-Emitter Breakdown Voltage (VCEO): 15V
️· Emitter-Base Breakdown Voltage (VEBO): 4.5V
️· Continuous Collector Current (IC): 0.2A
️· Collector Power Dissipation (PC): 500mW
️· Junction and Storage Temperature Range: -55°C to 150°C
## Ordering Information
| Part Number | Package | Packing Method | Pack Quantity |
|---|---|---|---|
| PH2369 | TO-92 | Bulk | 1000pcs/Bag |
| PH2369-TA | TO-92 | Tape | 2000pcs/Box |
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| DC Current Gain (hFE1) | VCE= 1V, IC= 10mA | 40 | 120 | ||
| DC Current Gain (hFE2) | VCE= 2V, IC= 100mA | 20 | |||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=10mA, IB=1mA | 0.25 | V | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=10mA, IB=1mA | 0.7 | 0.85 | V | |
| Transition Frequency (fT) | VCE= 10V, IC=10mA | 500 | MHz | ||
| Collector Capacitance (Cc) | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| Emitter Capacitance (Ce) | VEB=1V, IE=0, f=1MHz | 4.5 | pF | ||
| Turn-on Time (ton) | VCC=3V, IC=10mA, IB1= 3mA | 10 | ns | ||
| Turn-off Time (toff) | 20 | ns |
| Part No. | PH2369 |
| Manufacturer | DGNJDZ |
| Size | 1Mb |
| Pages | 4 pages |
| Description | TO-92 Plastic-Encapsulate Transistors |
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