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CDP1822 Datasheet with Chat AI
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    Hello, Please ask a question about CDP1822 Datasheet

  • # Example questions: ➢ What is the 'chip deselect to data retention time' (tcdr) for the cdp1822c at both 5v and 10v, and how do these values compare?
    ➢ What is the difference in the 'write cycle' time (twc) between the cdp1822 and cdp1822c when tested at 5v and 10v?
    ➢ What is the minimum data retention voltage (vdr) for the cdp1822c, and what is the typical quiescent current (idd) during data retention?

  • Part No.CDP1822
    ManufacturerINTERSIL
    Size169 Kbytes
    Pages9 pages
    Description256-Word x 4-Bit LSI Static RAM
    Datasheet Summary with AI

    1. Device Overview

    ️· CDP1822 & CDP1822C: These are likely CMOS dynamic RAM (DRAM) devices. The 'C' variant seems to have slightly different timing parameters.
    ️· Voltage Ranges: The datasheets give minimum and maximum operating voltages.

    2. Electrical Characteristics (Summary)

    Let's break down the tables into categories and summarize the key specifications. Note that a complete analysis would require knowing the specific tests and assumptions used to obtain the measurements. This is an interpretation.

    A. DC Characteristics (Power, Timing, etc.)

    ️· Operating Voltage (VDD): VDD min and max values vary (likely between 1.5V-5V)
    ️· Data Retention Voltage (VDR): A minimum voltage required to retain data in the device.
    ️· Data Retention Current (IDD): The current consumed when in data retention mode.
    ️· Timing Parameters: Several timing parameters are defined (e.g., tAS, tDS, tDH, tRC, tCDR, tDOH1, tDOH2). These represent the setup and hold times for various signals (address, data, chip select, etc.). These are crucial for reliable operation.

    B. AC Characteristics (Timing Values)

    These tables focus on timing values measured across the device. Key parameters include:

    ️· Read Cycle Times (tWC): Time required for a read cycle to complete.
    ️· Address Setup/Hold Times (tAS, tDH): Times that address signals must be valid before and after the clock signal.
    ️· Write Cycle Times (tWR): Time required to complete a write cycle.
    ️· Chip Select Timing (tCS1S, tCS2S, tCS1H, tCS2H): Setup and hold times for chip select signals.
    ️· Output Disable Times (tODS): Times to disable the output.
    ️· Data Retention timing (tCDR, tRC).

    3. Differences Between CDP1822 and CDP1822C:

    ️· Timing Values: The most notable difference lies in the AC timing parameters. The "C" variant generally has faster or more relaxed timing requirements, suggesting it may be designed for slightly different applications or operating environments.
    ️· Data Retention Characteristics: CDP1822C data retention specifications are listed.

    4. CL = 100pF Tests:

    ️· Several tests are performed with a capacitive load (CL) of 100 pF. This indicates how the device performs under a certain load condition.

    5. Data Retention Mode:

    ️· Data Retention Mode allows for keeping data inside the chip at a reduced power.

    Important Considerations:

    ️· Test Conditions: These tables are typically accompanied by detailed descriptions of the test conditions used to generate the measurements. Knowing these conditions is crucial for interpreting the data correctly.
    ️· Application-Specific Requirements: The choice of device (CDP1822 vs. CDP1822C) depends on the specific requirements of the application.
    ️· Complete Datasheet: These tables are excerpts from a larger datasheet. A complete datasheet would provide more context, including descriptions of pin assignments, functional diagrams, and application notes.


    ️· Which specific timing parameters are you most interested in?
    ️· What is the intended application for this device?

    1. Device Overview

    ️· CDP1822 & CDP1822C: These are likely CMOS dynamic RAM (DRAM) devices. The 'C' variant seems to have slightly different timing parameters.
    ️· Voltage Ranges: The datasheets give minimum and maximum operating voltages.

    2. Electrical Characteristics (Summary)

    Let's break down the tables into categories and summarize the key specifications. Note that a complete analysis would require knowing the specific tests and assumptions used to obtain the measurements. This is an interpretation.

    A. DC Characteristics (Power, Timing, etc.)

    ️· Operating Voltage (VDD): VDD min and max values vary (likely between 1.5V-5V)
    ️· Data Retention Voltage (VDR): A minimum voltage required to retain data in the device.
    ️· Data Retention Current (IDD): The current consumed when in data retention mode.
    ️· Timing Parameters: Several timing parameters are defined (e.g., tAS, tDS, tDH, tRC, tCDR, tDOH1, tDOH2). These represent the setup and hold times for various signals (address, data, chip select, etc.). These are crucial for reliable operation.

    B. AC Characteristics (Timing Values)

    These tables focus on timing values measured across the device. Key parameters include:

    ️· Read Cycle Times (tWC): Time required for a read cycle to complete.
    ️· Address Setup/Hold Times (tAS, tDH): Times that address signals must be valid before and after the clock signal.
    ️· Write Cycle Times (tWR): Time required to complete a write cycle.
    ️· Chip Select Timing (tCS1S, tCS2S, tCS1H, tCS2H): Setup and hold times for chip select signals.
    ️· Output Disable Times (tODS): Times to disable the output.
    ️· Data Retention timing (tCDR, tRC).

    3. Differences Between CDP1822 and CDP1822C:

    ️· Timing Values: The most notable difference lies in the AC timing parameters. The "C" variant generally has faster or more relaxed timing requirements, suggesting it may be designed for slightly different applications or operating environments.
    ️· Data Retention Characteristics: CDP1822C data retention specifications are listed.

    4. CL = 100pF Tests:

    ️· Several tests are performed with a capacitive load (CL) of 100 pF. This indicates how the device performs under a certain load condition.

    5. Data Retention Mode:

    ️· Data Retention Mode allows for keeping data inside the chip at a reduced power.

    Important Considerations:

    ️· Test Conditions: These tables are typically accompanied by detailed descriptions of the test conditions used to generate the measurements. Knowing these conditions is crucial for interpreting the data correctly.
    ️· Application-Specific Requirements: The choice of device (CDP1822 vs. CDP1822C) depends on the specific requirements of the application.
    ️· Complete Datasheet: These tables are excerpts from a larger datasheet. A complete datasheet would provide more context, including descriptions of pin assignments, functional diagrams, and application notes.


    ️· Which specific timing parameters are you most interested in?
    ️· What is the intended application for this device?

    Part No.CDP1822
    ManufacturerINTERSIL
    Size169 Kbytes
    Pages9 pages
    Description256-Word x 4-Bit LSI Static RAM
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