# isc N-Channel MOSFET Transistor FS7VS-12

## Features
· Drain Current (ID): 7A @ TC = 25℃
· Drain-Source Voltage (VDSS): 600V (Min)

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	600	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	7	A
IDM	Drain Current-Single Pluse	21	A
PD	Total Dissipation @TC=25℃	125	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	1.0	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID=1mA	600	--	--	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 1mA	2.0	3.0	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=3A	--	1.0	1.3	Ω
IGSS	Gate-Body Leakage Current	VGS= ±25V;VDS= 0	--	--	±10	uA
IDSS	Zero Gate Voltage Drain Current	VDS=600V; VGS= 0	--	--	1	mA
VSD	Forward On-Voltage	IS=3A; VGS= 0	--	1.5	2.0	V

## Product Disclaimer
· Intended for general electronic equipment.
· Not designed for specialized quality/reliability, hazardous environments, aerospace, or medical fields. Contact for these applications.
· No warranty or guarantee regarding suitability.
· Disclaims liability arising from application or use.