# isc N-Channel MOSFET Transistor FS70VSJ-06

## Features

· Drain Current (ID): 70A @ TC = 25°C
· Drain-Source Voltage (VDSS): 60V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 7mΩ (Max)



## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	60	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	70	A
IDM	Drain Current-Single Pulse	280	A
PD	Total Dissipation @ TC=25°C	125	W
TJ	Max. Operating Junction Temperature	150	°C
Tstg	Storage Temperature	-55~150	°C

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rthj-c	Thermal Resistance, Junction to Case	1.0	°C/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=1mA	60	--	--	V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=1mA	1.0	1.5	2.0	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=35A	--	5.4	7.0	mΩ
RDS(on)	Drain-Source On-Resistance	VGS=4V; ID=35A	--	6.5	8.4	mΩ
IGSS	Gate-Body Leakage Current	VGS=±20V; VDS=0	--	--	±0.1	µA
IDSS	Zero Gate Voltage Drain Current	VDS=60V; VGS=0	--	--	0.1	mA
VSD	Forward On-Voltage	IS=35A; VGS=0	--	1.0	1.5	V

## Product Disclaimer

· Intended for general electronic equipment.
· Not designed for applications requiring specialized quality, reliability, hazardous environments, aerospace, or medical fields. Contact for special applications.
· No warranty or guarantee regarding suitability for a specific purpose.
· Disclaims liability for application or use of products.