# AlInGaP/GaAs LED Chips - Specification (Item No.: 194272)

## Product Description

· Applies to AlInGaP/GaAs LED Chips.

## Structure

· Mesa Structure: LED chips utilize a mesa structure.
· Electrodes:
- p-side (anode): Au alloy or Al
- n-side (cathode): Au alloy

## Dimensions (Microns)

· Values provided in a table (detailed numeric values omitted).

## Electrical and Optical Characteristics (T=25°C)

Parameter	Symbol	Conditions	min	typ	max	Unit
Forward voltage	VF	IF = 20 mA		2.10	2.40	V
Reverse current	IR	VR = 5 V			10	µA
Luminous intensity *	IV	IF = 10 mA		11.0		mcd
Dominant wavelength	λD	IF = 20 mA		640		nm

· *Luminous intensity classes available on request.
· Brightness measurement performed at OSA on gold plate.

## Packing

· Dice are packaged on adhesive film.
· Wire bond side is on top.
· Back contact is on top.

## Labeling

· Includes: Type, Lot No., IV (typical), Quantity, min, max, p-Electrode.