H227 / SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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Part No.	H227
Manufacturer	HUASHAN
Size	150 Kbytes
Pages	2 pages
Description	NPN SILICON TRANSISTOR

Datasheet Summary with AI

- Classification: O (70-140), Y (120-240), G (200-400)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.14 - 0.4V (IC=300mA, IB=30mA)
️· Collector Cut-off Current (ICBO): 100nA (VCB=25V, IE=0)
️· Emitter Cut-off Current (IEBO): 100nA (VEB=3V, IC=0)

## Package Information
️· TO-92
️· Pinout: 1-Emitter (E), 2-Base (B), 3-Collector (C)

# H227 NPN Silicon Transistor

## General Description
️· NPN Silicon Transistor
️· Designed for low frequency power amplifier applications.

## Absolute Maximum Ratings (Ta=25℃)
️· Storage Temperature: -55~150℃
️· Junction Temperature: 150℃
️· Collector Dissipation: 400mW
️· Collector-Base Voltage (VCBO): 30V
️· Collector-Emitter Voltage (VCEO): 25V
️· Emitter-Base Voltage (VEBO): 5V
️· Collector Current (IC): 300mA

## Electrical Characteristics (Ta=25℃)
️· Collector-Base Breakdown Voltage (BVCBO): 30V (IC=100μA, IE=0)
️· Collector-Emitter Breakdown Voltage (BVCEO): 25V (IC=10mA, IB=0)
️· Emitter-Base Breakdown Voltage (BVEBO): 5V (IE=10μA, IC=0)
️· DC Current Gain (HFE): 70-400 (VCE=1V, IC=50mA)
- Classification: O (70-140), Y (120-240), G (200-400)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.14 - 0.4V (IC=300mA, IB=30mA)
️· Collector Cut-off Current (ICBO): 100nA (VCB=25V, IE=0)
️· Emitter Cut-off Current (IEBO): 100nA (VEB=3V, IC=0)

## Package Information
️· TO-92
️· Pinout: 1-Emitter (E), 2-Base (B), 3-Collector (C)