H400S / SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

H400S Datasheet with Chat AI

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Part No.	H400S
Manufacturer	HUASHAN
Size	243 Kbytes
Pages	1 page
Description	NPN SILICON TRANSISTOR

Datasheet Summary with AI

️· Emitter-Base Breakdown Voltage (BVEBO): 5V (IE=10μA, IC=0)
️· DC Current Gain (HFE (1)): 60-560 (VCE=2V, IC=50mA)
️· DC Current Gain (HFE (2)): 30- (VCE=2V, IC=1A)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.1-0.3V (IC=0.5A, IB=50mA)
️· Base-Emitter Saturation Voltage (VBE(sat)): 0.85-1.2V (IC=0.5A, IB=50mA)
️· Collector Cut-off Current (ICBO): 1μA (VCB=20V, IE=0)
️· Emitter Cut-off Current (IEBO): 1μA (VEB=4V, IC=0)
️· Collector Cut-off Current (ICEO): 1μA (VCE=20V, IB=0)
️· Current Gain-Bandwidth Product (fT): 180 MHz (VCE=10V, IC=50mA)
️· Output Capacitance (Cob): 15pF (VCB=10V, IE=0, f=1MHz)

## hFE Classification
️· D: 60-120
️· E: 100-200
️· F: 160-320
️· G: 280-560

# H400S NPN Silicon Transistor

## General Description
️· NPN Silicon Transistor
️· Application: Low Frequency Power Amplifier
️· Package: TO-92
️· Pinout: 1-Emitter (E), 2-Collector (C), 3-Base (B)

## Absolute Maximum Ratings (Ta = 25℃)
️· Storage Temperature: -55~150 ℃
️· Junction Temperature: 150 ℃
️· Collector Dissipation: 900mW
️· Collector-Base Voltage (VCBO): 25V
️· Collector-Emitter Voltage (VCEO): 25V
️· Emitter-Base Voltage (VEBO): 5V
️· Collector Current (IC): 1A

## Electrical Characteristics (Ta = 25℃)
️· Collector-Base Breakdown Voltage (BVCBO): 25V (IC=10μA, IE=0)
️· Collector-Emitter Breakdown Voltage (BVCEO): 25V (IC=1mA, IB=0)
️· Emitter-Base Breakdown Voltage (BVEBO): 5V (IE=10μA, IC=0)
️· DC Current Gain (HFE (1)): 60-560 (VCE=2V, IC=50mA)
️· DC Current Gain (HFE (2)): 30- (VCE=2V, IC=1A)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.1-0.3V (IC=0.5A, IB=50mA)
️· Base-Emitter Saturation Voltage (VBE(sat)): 0.85-1.2V (IC=0.5A, IB=50mA)
️· Collector Cut-off Current (ICBO): 1μA (VCB=20V, IE=0)
️· Emitter Cut-off Current (IEBO): 1μA (VEB=4V, IC=0)
️· Collector Cut-off Current (ICEO): 1μA (VCE=20V, IB=0)
️· Current Gain-Bandwidth Product (fT): 180 MHz (VCE=10V, IC=50mA)
️· Output Capacitance (Cob): 15pF (VCB=10V, IE=0, f=1MHz)

## hFE Classification
️· D: 60-120
️· E: 100-200
️· F: 160-320
️· G: 280-560