## Summary of the Datasheet for 3DD13003B NPN Transistor

This document is a datasheet for the 3DD13003B, a 1.5A, 700V NPN plastic-encapsulated transistor manufactured by Elektronische Bauelemente. Here's a summary of the key specifications and characteristics:

Absolute Maximum Ratings:

️· Collector-Base Voltage (VCBO): 700V
️· Collector-Emitter Voltage (VCEO): 400V
️· Emitter-Base Voltage (VEBO): 9V
️· Continuous Collector Current (IC): 1.5A
️· Collector Power Dissipation (PC): 900mW
️· Junction Temperature (TJ): 150°C
️· Storage Temperature Range (TSTG): -55°C to +150°C

Electrical Characteristics (at TA = 25°C unless otherwise noted):

️· Collector-Base Breakdown Voltage (V(BR)CBO): 700V (IC=1mA, IE=0)
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 400V (IC=10mA, IB=0)
️· Emitter-Base Breakdown Voltage (V(BR)EBO): 9V (IE=1mA, IC=0)
️· Collector Cut-off Current (ICBO): ≤ 100µA (VCB=700V, IE=0), ≤50µA
️· Collector Cut-off Current (ICEO):
️· Emitter Cut-off Current (IEBO): ≤ 10µA (VEB=7V, IC=0)
️· DC Current Gain (hFE): 20-30 (VCE=10V, IC=400mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)1): ≤ 3V (IC=1.5A, IB=500mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)2): ≤ 0.8V (IC=0.5A, IB=100mA)
️· Base-Emitter Saturation Voltage (VBE(sat): ≤ 1V (IC=0.5A, IB=100mA)
️· Transition Frequency (fT): ≥ 4 MHz (VCE=10V, IC=100mA, f =1MHz)
️· Storage Time (tS): ≤ 4 µs (IB1=-IB2=0.2A)
️· Fall Time (tF): ≤ 0.7 µs (IC=1A)

Package: TO-92 plastic

Revision Date: 15-Jun-2011

Manufacturer: Elektronische Bauelemente

Key Applications:

️· Power switching applications
️· General purpose amplification

This datasheet provides detailed electrical and thermal characteristics for the 3DD13003B transistor, allowing designers to determine if this component meets the requirements of their specific application.