1. Device:

️· Type: NPN Transistor
️· Part Number: 2SD667A

2. Absolute Maximum Ratings:

Parameter	Symbol	Rating	Unit
Collector-Base Voltage	VCBO	120	V
Collector-Emitter Voltage	VCEO	100	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1	A
Collector Dissipation	PC	0.9	W
Junction Temperature	Tj	150	°C
Storage Temperature	Tstg	-55 to 150	°C

3. Electrical Characteristics (at Ta = 25°C unless otherwise specified):

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Collector-Base Breakdown Voltage	V(BR)CBO	120			V	IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	100			V	IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	5			V	IE = 10µA, IC = 0
Collector Cut-off Current	ICBO			10	µA	VCB = 100V, IE = 0
Emitter Cut-off Current	IEBO			10	µA	VEB = 4V, IC = 0
DC Current Gain (hFE)	hFE (1)	60		320		VCE = 5V, IC = 150mA
DC Current Gain (hFE)	hFE (2)	30				VCE = 5V, IC = 500mA
Collector-Emitter Saturation Voltage	VCE(sat)			1	V	IC = 500mA, IB = 50mA
Base-Emitter Voltage	VBE			1.5	V	VCE = 5V, IC = 150mA
Transition Frequency	fT		140		MHz	VCE = 5V, IC = 150mA
Collector Output Capacitance	Cob		12		pF	VCB = 10V, IE = 0, f = 1MHz

4. Other Information:

️· Revision: Rev. A
️· Date: 7-Oct-2011
️· Page: 1 of 1
️· TO-92 package.

5. Key Applications:

️· Low Frequency Power Amplifier
️· Complementary Pair with 2SB647A

Important Notes:

️· The datasheet emphasizes that all maximum ratings are absolute and exceeding them may damage the device.
️· Electrical characteristics are specified at a particular test temperature (Ta = 25°C) and may vary over temperature and other operating conditions.