BC808 / SeCoS Halbleitertechnologie GmbH

BC808 Datasheet with Chat AI

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Part No.	BC808
Manufacturer	SECOS
Size	820 Kbytes
Pages	3 pages
Description	-0.8A , -30V PNP Plastic Encapsulated Transistor

Datasheet Summary with AI

1. General Information:

️· Part Number: BC808
️· Description: PNP Plastic Encapsulated Transistor
️· Manufacturer: Elektronische Bauelemente (SeCoS GmbH)
️· Date: 15-Jul-2011 (Revision A)
️· Website: [http://www.SeCoSGmbH.com/](http://www.SeCoSGmbH.com/) (Note: Changes to specifications will not be individually notified)

2. Absolute Maximum Ratings:

Parameter Symbol Value Unit

Collector-Base Voltage VCBO -30 V

Collector-Emitter Voltage VCEO -25 V

Emitter-Base Voltage VEBO -5 V

Collector Current (Continuous) IC -800mA mA

Collector Power Dissipation PC 300mW mW

Junction/Storage Temperature Tj/Tstg 150°C / -65 to 150°C °C

3. Electrical Characteristics (TA = 25°C unless otherwise specified):

Parameter Symbol Min Typ Max Unit Test Conditions

Collector Breakdown Voltage V(BR)CBO -30 - - V IC = -100µA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE = -100µA, IC = 0

Collector Cut-off Current ICBO - - -0.1 µA VCB = -25V, IE = 0

Emitter Cut-off Current IEBO - - -0.1 µA VEB = -4V, IC = 0

DC Current Gain (hFE) hFE(1) 100 - 630 - VCE = -1V, IC = -100mA

DC Current Gain (hFE) hFE(2) 60 - - - VCE = -1V, IC = -300mA

Collector-Emitter Saturation Voltage VCE(sat) - - -0.7 V IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage VBE - - -1.2 V VCE = -1V, IC = -300mA

Transition Frequency fT - 100 - MHz VCE = -5V, IC = -10mA, f = 50MHz

Collector Output Capacitance Cob - 12 - pF VCB = -10V, IE = 0, f = 1MHz

4. Package/Pinout:

The datasheet includes a diagram showing the SOT-23 package with the pinout:

️· E - Emitter
️· B - Base
️· C - Collector

5. Characteristic Curves:

The datasheet also contains characteristic curves (graphs) showing relationships between parameters like collector current, base current, collector-emitter voltage, etc. These curves provide more detailed performance information.

In Summary:

The BC808 is a general-purpose NPN transistor suitable for various amplification and switching applications. The datasheet provides a complete set of electrical characteristics and absolute maximum ratings for proper design and usage.

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	-30	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current (Continuous)	IC	-800mA	mA
Collector Power Dissipation	PC	300mW	mW
Junction/Storage Temperature	Tj/Tstg	150°C / -65 to 150°C	°C

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Collector Breakdown Voltage	V(BR)CBO	-30	-	-	V	IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-25	-	-	V	IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	-5	-	-	V	IE = -100µA, IC = 0
Collector Cut-off Current	ICBO	-	-	-0.1	µA	VCB = -25V, IE = 0
Emitter Cut-off Current	IEBO	-	-	-0.1	µA	VEB = -4V, IC = 0
DC Current Gain (hFE)	hFE(1)	100	-	630	-	VCE = -1V, IC = -100mA
DC Current Gain (hFE)	hFE(2)	60	-	-	-	VCE = -1V, IC = -300mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	-0.7	V	IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage	VBE	-	-	-1.2	V	VCE = -1V, IC = -300mA
Transition Frequency	fT	-	100	-	MHz	VCE = -5V, IC = -10mA, f = 50MHz
Collector Output Capacitance	Cob	-	12	-	pF	VCB = -10V, IE = 0, f = 1MHz