BC869 / WILLAS ELECTRONIC CORP - Datenblatt(PDF) Chat AI

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Part No.	BC869
Manufacturer	WILLAS
Size	427 Kbytes
Pages	2 pages
Description	SOT-89 Plastic-Encapsulate Transistors

Datasheet Summary with AI

· Emitter-base breakdown voltage V(BR)EBO: -5 V
· hFE(1) (VCE=-10V, IC=-5mA): 50
· hFE(2) (VCE=-1V, IC=-0.5A): 100 - 375
· hFE(3) (VCE=-1V, IC=-1A): 60
· Collector-emitter saturation voltage VCE(sat) (IC=-1A, IB=-0.1A): -0.5 V
· Base -emitter voltage VBE (VCE=-10V, IC=-5mA): -0.62 V
· Transition frequency fT (VCE=-5V, IC=-10mA): 40 MHz

## hFE Classification
· BC869: 100–375
· BC869-16: 100–250
· BC869-25: 160–375

## Package Information
· Package Type: SOT-89
· Pinout:
1. Base
2. Collector
3. Emitter

# BC869 PNP Transistor

## Features
· NPN Complement to BC868
· Low Voltage
· High Current

## Maximum Ratings
· Collector-Base Voltage (VCBO): -32 V
· Collector-Emitter Voltage (VCEO): -20 V
· Emitter-Base Voltage (VEBO): -5 V
· Collector Current (IC): -1 A
· Collector Power Dissipation (PC): 500 mW
· Thermal Resistance (RθJA): 250 ℃/W
· Junction Temperature (Tj): 150 ℃
· Storage Temperature (Tstg): -55 to +150 ℃

## Electrical Characteristics (Ta=25℃)
· Collector-base breakdown voltage V(BR)CBO: -32 V
· Collector-emitter breakdown voltage V(BR)CEO: -20 V
· Emitter-base breakdown voltage V(BR)EBO: -5 V
· hFE(1) (VCE=-10V, IC=-5mA): 50
· hFE(2) (VCE=-1V, IC=-0.5A): 100 - 375
· hFE(3) (VCE=-1V, IC=-1A): 60
· Collector-emitter saturation voltage VCE(sat) (IC=-1A, IB=-0.1A): -0.5 V
· Base -emitter voltage VBE (VCE=-10V, IC=-5mA): -0.62 V
· Transition frequency fT (VCE=-5V, IC=-10mA): 40 MHz

## hFE Classification
· BC869: 100–375
· BC869-16: 100–250
· BC869-25: 160–375

## Package Information
· Package Type: SOT-89
· Pinout:
1. Base
2. Collector
3. Emitter