# 2SC2878 Silicon NPN Epitaxial Transistor

## Electrical Characteristics
️· hFE (DC Current Gain): 200-1200 (VCE = 2V, IC = 4mA) - Classification A: 200~700, B: 350~1200
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.042 - 0.1 V (IC = 30mA, IB = 3mA)
️· Base-Emitter Voltage (VBE): 0.61 V (VCE = 2V, IC = 4mA)
️· Transition Frequency (fT): 30 MHz (VCE = 6V, IC = 4mA)
️· Collector Output Capacitance (Cob): 4.8-7 pF (VCB = 10V, IE = 0, f = 1 MHz)
️· Turn-on time (ton): 160ns
️· Storage time (tstg): 500ns
️· Fall time (tf): 130ns

## Absolute Maximum Ratings (Ta = 25°C)
️· Collector-Base Voltage (VCBO): 50 V
️· Collector-Emitter Voltage (VCEO): 20 V
️· Emitter-Base Voltage (VEBO): 25 V
️· Collector Current (IC): 300 mA
️· Base Current (IB): 60 mA
️· Collector Power Dissipation (PC): 400 mW
️· Junction Temperature (Tj): 125 °C

️· Storage Temperature Range (Tstg): -55 to 125 °C

## Key Features
️· For Muting and Switching applications
️· High emitter-base voltage: VEBO = 25 V (min)
️· High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
️· Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

## Package
️· JEDEC TO-92
️· JEITA SC-43
️· Weight: 0.21 g (typ.)

## Restrictions
️· Product use restricted to general electronics applications. Not for use in Unintended Use applications.
️· Toshiba reserves the right to change product specifications without notice.
️· Customer responsible for safety standards and appropriate design.