# UTC 4124D NPN Epitaxial Silicon Transistor

## Description
· Middling voltage NPN power transistor.
· Designed for high switching speed and reliability.
· Suitable for electronic ballasts, power amplifier circuits, and energy-saving lights.

## Features
· High switching speed
· High reliability

## Ordering Information
· Package Types: TO-92, TO-126
· Packing Options: Tape Box, Bulk, Tape Reel
· Lead Finish: Lead Free (L), Halogen Free (G)
· Pin Assignment:
- Base (B)
- Collector (C)
- Emitter (E)

## Absolute Maximum Ratings (TC=25°C)
· Collector-Base Voltage (VCES): 350 V
· Collector-Emitter Voltage (VCEO): 200 V
· Emitter-Base Voltage (VEBO): 7 V
· Continuous Collector Current (IC): 2 A
· Pulse Collector Current (ICP): 4 A
· Base Current (IB): 1 A
· Pulse Base Current (IBP): 2 A
· Total Dissipation (PC):
- TO-92: 1.5 W
- TO-126: 20 W
· Junction Temperature (TJ): 150 °C
· Storage Temperature Range (TSTG): -55 ~ +150 °C

## Thermal Characteristics
· Junction to Case (θJC):
- TO-92: 80 °C/W
- TO-126: 6.25 °C/W

## Electrical Characteristics (Test Conditions specified in table)
· Collector-Base Breakdown Voltage (BVCBO): 350 V
· Collector-Emitter Breakdown Voltage (BVCEO): 200 V
· Emitter-Base Breakdown Voltage (BVEBO): 7 V
· Collector Cut-Off Current (ICBO): 100 µA
· Collector-Emitter Cut-Off Current (ICEO): 50 µA
· Emitter Cut-Off Current (IEBO): 10 µA
· Collector-Emitter Saturation Voltage (VCE(SAT)): 0.8 - 1.0 V
· Base-Emitter Saturation Voltage (VBE(SAT)): 1.5 V
· DC Current Gain (hFE): 8-50, 5
· Transition Frequency (fT): 4 MHz
· Storage Time (tS): 4 µs
· Fall Time (tF): 0.7 µs