# LP7500.5 W POWER PHEMT

## Features
️· 28 dBm Output Power at 1-dB Compression (18 GHz)
️· 10 dB Power Gain (18 GHz)
️· 24 dBm Output Power at 1-dB Compression (3.3V)
️· 55% Power-Added Efficiency

## Description and Applications
️· Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) PHEMT
️· Utilizes a Schottky barrier gate
️· Optimized for high-power applications
️· Applications: SATCOM uplink transmitters, PCS/Cellular amplifiers, digital radio transmitters.

## Electrical Specifications
️· Saturated Drain-Source Current (IDSS): 180-265 mA
️· Power at 1-dB Compression (P-1dB): 26.5-28 dBm
️· Power Gain at 1-dB Compression (G-1dB): 8-10 dB
️· Power-Added Efficiency (PAE): 55%
️· Maximum Drain-Source Current (IMAX): 400 mA
️· Transconductance (GM): 180-230 mS
️· Gate-Source Leakage Current (IGSO): 5-40 µA
️· Pinch-Off Voltage (VP): -0.25 to -2.0 V
️· Thermal Resistivity (ΘJC): 65 °C/W
️· Frequency: 18 GHz

## Absolute Maximum Ratings
️· Drain-Source Voltage (VDS): 12 V
️· Gate-Source Voltage (VGS): -4 V
️· Drain-Source Current (IDS): 2xIDSS mA
️· Gate Current (IG): 7.5 mA
️· RF Input Power (PIN): 300 mW
️· Channel Operating Temperature (TCH): 175 ºC
️· Storage Temperature (TSTG): -65 to 175 ºC
️· Total Power Dissipation (PTOT): 2.2 W

## Handling and Assembly
️· ESD precautions required (Class 1A)
️· Recommended die attach: Gold/tin eutectic solder (280-290°C, 1 minute)
️· Recommended wire bonding: Thermo-compression wedge bonding (250-260°C)

## Additional Information
️· Applications notes and design data (S-parameters, noise data, large-signal models) are available.