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    • Part No.E50A2CPS
    ManufacturerKEC
    Size351 Kbytes
    Pages1 page
    DescriptionSTACK SILICON DIFFUSED DIODE
    Datasheet Summary with AI

    # E50A2CPS, E50A2CPR - Stack Silicon Diffused Diode

    ## General Description

    · Alternator diode for automotive application.

    ## Features

    · Average Forward Current (IO): 50A
    · Reverse Voltage: 200V (Minimum)

    ## Polarity

    · E50A2CPS: + Type
    · E50A2CPR: - Type

    ## Maximum Ratings (Ta = 25°C)

    · Average Forward Current (IF(AV)): 50A
    · Peak 1 Cycle Surge Current (IFSM): 500A (at 60Hz)

    · Repetitive Peak Reverse Voltage (VRRM): 200V
    · Junction Temperature (Tj): -40°C to 200°C
    · Storage Temperature Range (Tstg): -40°C to 200°C

    ## Electrical Characteristics (Ta = 25°C)

    · Forward Voltage (VF) @ IFM=100A: 1.05V
    · Reverse Voltage (VR) @ IR=5mA: 200V
    · Reverse Current (IR) @ VR=200V: 50 μA
    · Transient Thermal Resistance (VF): 130 mV
    · Reverse Recovery Time (trr): 15 μs
    · Reverse Leakage Current (HIR) @ Ta=150°C, VR=200V: 2.5 mA
    · Junction to Base Thermal Resistance: 0.8 °C/W
    · Junction to Fin Thermal Resistance: 1.0 °C/W

    # E50A2CPS, E50A2CPR - Stack Silicon Diffused Diode

    ## General Description

    · Alternator diode for automotive application.

    ## Features

    · Average Forward Current (IO): 50A
    · Reverse Voltage: 200V (Minimum)

    ## Polarity

    · E50A2CPS: + Type
    · E50A2CPR: - Type

    ## Maximum Ratings (Ta = 25°C)

    · Average Forward Current (IF(AV)): 50A
    · Peak 1 Cycle Surge Current (IFSM): 500A (at 60Hz)
    · Repetitive Peak Reverse Voltage (VRRM): 200V
    · Junction Temperature (Tj): -40°C to 200°C
    · Storage Temperature Range (Tstg): -40°C to 200°C

    ## Electrical Characteristics (Ta = 25°C)

    · Forward Voltage (VF) @ IFM=100A: 1.05V
    · Reverse Voltage (VR) @ IR=5mA: 200V
    · Reverse Current (IR) @ VR=200V: 50 μA
    · Transient Thermal Resistance (VF): 130 mV
    · Reverse Recovery Time (trr): 15 μs
    · Reverse Leakage Current (HIR) @ Ta=150°C, VR=200V: 2.5 mA
    · Junction to Base Thermal Resistance: 0.8 °C/W
    · Junction to Fin Thermal Resistance: 1.0 °C/W

    Part No.E50A2CPS
    ManufacturerKEC
    Size351 Kbytes
    Pages1 page
    DescriptionSTACK SILICON DIFFUSED DIODE
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