2SD667A / Foshan Blue Rocket Electronics Co.,Ltd.

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Part No.	2SD667A
Manufacturer	FOSHAN
Size	903 Kbytes
Pages	6 pages
Description	Silicon NPN transistor in a TO-92LM Plastic Package

Datasheet Summary with AI

# 2SD667(A) Transistor Datasheet Summary

This document summarizes the 2SD667(A) transistor datasheet.

Description:

️· TO-92LM plastic-encapsulated NPN transistor.
️· Complementary to the 2SB647(A).
️· Designed for low-frequency power amplification.

Key Features and Specifications:

️· Pinout:
- PIN 1: Base
- PIN 2: Collector
- PIN 3: Emitter
️· Absolute Maximum Ratings (Ta=25°C):
- Collector-Base Voltage (VCBO): 120V
- Collector-Emitter Voltage (VCEO): 80V (2SD667), 100V (2SD667A)
- Emitter-Base Voltage (VEBO): 5.0V
- Collector Current (IC): 1.0A
- Collector Current (Pulse) (ICP): 2.0A
- Collector Power Dissipation (PC): 900mW
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): -55°C to 150°C
️· hFE Ranges:
- B: 60-120
- C: 100-200
- D: 160-320
️· Electrical Characteristics (Ta=25°C):
- Collector Cut-off Current (ICBO): 10μA
- Collector-Emitter Saturation Voltage (VCE(sat)): 1.0V
- Base-Emitter Saturation Voltage (VBE): 1.5V
- Transition Frequency (fT): 140 MHz
- Collector Output Capacitance (Cob): 12 pF
️· Packaging:
- Bulk: Supports a high number of units.
- Ammo: Supports a high volume number of units.

Other Information:

️· Marking includes company code, part number, and hFE range identification.
️· Datasheet includes Wave Soldering Temperature Profile