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Hello, Please ask a question about 2SC2878A Datasheet
# Example questions:
➢ What package type does the 2sc2878a transistor use, and what are its dimensions?
➢ What are the typical values for the base-emitter voltage (vbe) and at what collector current is this specified?
➢ What is the maximum collector current (ic) that the 2sc2878a transistor can handle?
Device: 2SC2878A
Type: NPN Plastic Encapsulated Transistor
Manufacturer: Elektronische Bauelemente (likely the brand/supplier)
Key Specifications (Absolute Maximum Ratings):
️· Collector-Base Voltage (VCBO): 50V
️· Collector-Emitter Voltage (VCEO): 20V
️· Emitter-Base Voltage (VEBO): 15V
️· Continuous Collector Current (IC): 300mA
️· Collector Power Dissipation (PC): 400mW
️· Junction & Storage Temperature (TJ, TSTG): 150°C, -55~150°C
Electrical Characteristics (Typical Values - Test Conditions provided):
️· Collector-Base Breakdown Voltage (V(BR)CBO): 50V
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 20V
️· Emitter-Base Breakdown Voltage (V(BR)EBO): 15V
️· DC Current Gain (hFE(1)): 200 - 700 (VCE = 2V, IC = 4mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V (IC = 30mA, IB = 3mA)
️· Base-Emitter Voltage (VBE): 0.71V (VCE = 2V, IC = 4mA)
️· Collector Output Capacitance (Cob): 7pF (VCB = 10V, IE = 0, f = 1MHz)
️· Transition Frequency (fT): 30 MHz (VCE = 6V, IC = 4mA)
️· Turn-On Time (ton): 160ns
️· Storage Time (ts): 500ns
️· Fall Time (tf): 130ns
Package/Pinout (TO-92):
️· 1: Emitter
️· 2: Collector
️· 3: Base
Date & Revision: 28-Mar-2016 Rev. A
Website: [http://www.SeCoGmbH.com](http://www.SeCoGmbH.com)
Important Note: The document states that any changes to specifications will not be notified.
Device: 2SC2878A
Type: NPN Plastic Encapsulated Transistor
Manufacturer: Elektronische Bauelemente (likely the brand/supplier)
Key Specifications (Absolute Maximum Ratings):
️· Collector-Base Voltage (VCBO): 50V
️· Collector-Emitter Voltage (VCEO): 20V
️· Emitter-Base Voltage (VEBO): 15V
️· Continuous Collector Current (IC): 300mA
️· Collector Power Dissipation (PC): 400mW
️· Junction & Storage Temperature (TJ, TSTG): 150°C, -55~150°C
Electrical Characteristics (Typical Values - Test Conditions provided):
️· Collector-Base Breakdown Voltage (V(BR)CBO): 50V
️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 20V
️· Emitter-Base Breakdown Voltage (V(BR)EBO): 15V
️· DC Current Gain (hFE(1)): 200 - 700 (VCE = 2V, IC = 4mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V (IC = 30mA, IB = 3mA)
️· Base-Emitter Voltage (VBE): 0.71V (VCE = 2V, IC = 4mA)
️· Collector Output Capacitance (Cob): 7pF (VCB = 10V, IE = 0, f = 1MHz)
️· Transition Frequency (fT): 30 MHz (VCE = 6V, IC = 4mA)
️· Turn-On Time (ton): 160ns
️· Storage Time (ts): 500ns
️· Fall Time (tf): 130ns
Package/Pinout (TO-92):
️· 1: Emitter
️· 2: Collector
️· 3: Base
Date & Revision: 28-Mar-2016 Rev. A
Website: [http://www.SeCoGmbH.com](http://www.SeCoGmbH.com)
Important Note: The document states that any changes to specifications will not be notified.
| Part No. | 2SC2878A |
| Manufacturer | SECOS |
| Size | 288 Kbytes |
| Pages | 2 pages |
| Description | 0.3A, 50V NPN Plastic Encapsulated Transistor |
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