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2SC2878A Datasheet with Chat AI
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  • Part No.2SC2878A
    ManufacturerSECOS
    Size288 Kbytes
    Pages2 pages
    Description0.3A, 50V NPN Plastic Encapsulated Transistor
    Datasheet Summary with AI

    Device: 2SC2878A

    Type: NPN Plastic Encapsulated Transistor

    Manufacturer: Elektronische Bauelemente (likely the brand/supplier)

    Key Specifications (Absolute Maximum Ratings):

    ️· Collector-Base Voltage (VCBO): 50V
    ️· Collector-Emitter Voltage (VCEO): 20V
    ️· Emitter-Base Voltage (VEBO): 15V
    ️· Continuous Collector Current (IC): 300mA
    ️· Collector Power Dissipation (PC): 400mW
    ️· Junction & Storage Temperature (TJ, TSTG): 150°C, -55~150°C

    Electrical Characteristics (Typical Values - Test Conditions provided):

    ️· Collector-Base Breakdown Voltage (V(BR)CBO): 50V
    ️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 20V
    ️· Emitter-Base Breakdown Voltage (V(BR)EBO): 15V
    ️· DC Current Gain (hFE(1)): 200 - 700 (VCE = 2V, IC = 4mA)
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V (IC = 30mA, IB = 3mA)
    ️· Base-Emitter Voltage (VBE): 0.71V (VCE = 2V, IC = 4mA)
    ️· Collector Output Capacitance (Cob): 7pF (VCB = 10V, IE = 0, f = 1MHz)
    ️· Transition Frequency (fT): 30 MHz (VCE = 6V, IC = 4mA)
    ️· Turn-On Time (ton): 160ns
    ️· Storage Time (ts): 500ns
    ️· Fall Time (tf): 130ns

    Package/Pinout (TO-92):

    ️· 1: Emitter
    ️· 2: Collector
    ️· 3: Base

    Date & Revision: 28-Mar-2016 Rev. A

    Website: [http://www.SeCoGmbH.com](http://www.SeCoGmbH.com)

    Important Note: The document states that any changes to specifications will not be notified.

    Device: 2SC2878A

    Type: NPN Plastic Encapsulated Transistor

    Manufacturer: Elektronische Bauelemente (likely the brand/supplier)

    Key Specifications (Absolute Maximum Ratings):

    ️· Collector-Base Voltage (VCBO): 50V
    ️· Collector-Emitter Voltage (VCEO): 20V
    ️· Emitter-Base Voltage (VEBO): 15V
    ️· Continuous Collector Current (IC): 300mA
    ️· Collector Power Dissipation (PC): 400mW
    ️· Junction & Storage Temperature (TJ, TSTG): 150°C, -55~150°C

    Electrical Characteristics (Typical Values - Test Conditions provided):

    ️· Collector-Base Breakdown Voltage (V(BR)CBO): 50V
    ️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 20V
    ️· Emitter-Base Breakdown Voltage (V(BR)EBO): 15V
    ️· DC Current Gain (hFE(1)): 200 - 700 (VCE = 2V, IC = 4mA)
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V (IC = 30mA, IB = 3mA)
    ️· Base-Emitter Voltage (VBE): 0.71V (VCE = 2V, IC = 4mA)
    ️· Collector Output Capacitance (Cob): 7pF (VCB = 10V, IE = 0, f = 1MHz)
    ️· Transition Frequency (fT): 30 MHz (VCE = 6V, IC = 4mA)
    ️· Turn-On Time (ton): 160ns
    ️· Storage Time (ts): 500ns
    ️· Fall Time (tf): 130ns

    Package/Pinout (TO-92):

    ️· 1: Emitter
    ️· 2: Collector
    ️· 3: Base

    Date & Revision: 28-Mar-2016 Rev. A

    Website: [http://www.SeCoGmbH.com](http://www.SeCoGmbH.com)

    Important Note: The document states that any changes to specifications will not be notified.

    Part No.2SC2878A
    ManufacturerSECOS
    Size288 Kbytes
    Pages2 pages
    Description0.3A, 50V NPN Plastic Encapsulated Transistor
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