KSC2383L / SeCoS Halbleitertechnologie GmbH

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Part No.	KSC2383L
Manufacturer	SECOS
Size	416 Kbytes
Pages	2 pages
Description	1A , 160V NPN Plastic Encapsulated Transistor

Datasheet Summary with AI

1. Device Overview:

️· Part Number: KSC2383L
️· Type: NPN Plastic Encapsulated Transistor
️· Manufacturer: (Implied, but indicated by the website domain: SeCoGmbH)
️· Key Specifications:
- Collector Current (IC): 1A
- Collector-Base Voltage (VCBO): 160V
- Collector-Emitter Voltage (VCEO): 160V
- Power Dissipation (PC): 0.75W

2. Absolute Maximum Ratings:

Parameter Symbol Rating Unit

Collector-Base Voltage VCBO 160 V

Collector-Emitter Voltage VCEO 160 V

Emitter-Base Voltage VEBO 6 V

Continuous Collector Current IC 1 A

Collector Power Dissipation PC 0.75 W

Junction/Storage Temp TJ/TSTG 150/-55~150 °C

3. Electrical Characteristics (at Ta = 25°C):

Parameter Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Voltage V(BR)CBO 160 - - V IC = 100µA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO 160 - - V IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V IE = 10µA, IC = 0

Collector Cut-off Current ICBO - - 1 µA VCB = 150V, IE = 0

Collector Cut-off Current ICER - - 10 µA VCB = 150V, REB = 10MΩ

Emitter Cut-off Current IEBO - - 1 µA VEB = 6V, IC = 0

DC Current Gain hFE 60 - 320 VCE = 5V, IC = 200mA

DC Current Gain hFE 40 - - VCE = 5V, IC = 10mA

Collector-Emitter Saturation Voltage VCE(sat) - - 1 V IC = 500mA, IB = 50mA

Base-Emitter Voltage VBE - - 0.75 V VCE = 5V, IC = 5mA

Transition Frequency fT - 20 - MHz VCE = 5V, IC = 200mA

4. Revision and Date:

️· Revision: Rev. A
️· Date: September 15, 2014

5. Website:

️· [http://www.SeCoGmbH.com](http://www.SeCoGmbH.com)

Key Features Highlighted in the Document:

️· Low Collector-Emitter Saturation Voltage (VCE(sat))
️· Suitable for Audio Power Amplifier applications
️· High Current Capability.

Parameter	Symbol	Rating	Unit
Collector-Base Voltage	VCBO	160	V
Collector-Emitter Voltage	VCEO	160	V
Emitter-Base Voltage	VEBO	6	V
Continuous Collector Current	IC	1	A
Collector Power Dissipation	PC	0.75	W
Junction/Storage Temp	TJ/TSTG	150/-55~150	°C

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Collector-Base Breakdown Voltage	V(BR)CBO	160	-	-	V	IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	160	-	-	V	IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	-	-	V	IE = 10µA, IC = 0
Collector Cut-off Current	ICBO	-	-	1	µA	VCB = 150V, IE = 0
Collector Cut-off Current	ICER	-	-	10	µA	VCB = 150V, REB = 10MΩ
Emitter Cut-off Current	IEBO	-	-	1	µA	VEB = 6V, IC = 0
DC Current Gain	hFE	60	-	320		VCE = 5V, IC = 200mA
DC Current Gain	hFE	40	-	-		VCE = 5V, IC = 10mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	1	V	IC = 500mA, IB = 50mA
Base-Emitter Voltage	VBE	-	-	0.75	V	VCE = 5V, IC = 5mA
Transition Frequency	fT	-	20	-	MHz	VCE = 5V, IC = 200mA