## Summary of the Provided Transistor Datasheet

This document is a datasheet for an NPN transistor, likely in a TO-92 package. Here's a breakdown of the key information:

1. Basic Characteristics:

️· Type: NPN Transistor
️· Package: TO-92

2. Absolute Maximum Ratings (at Ta = 25°C):

️· Collector-Base Voltage (VCBO): 40V
️· Collector-Emitter Voltage (VCEO): 20V
️· Emitter-Base Voltage (VEBO): 6V
️· Collector Current (IC): 1A
️· Total Power Dissipation (PD): 0.625W
️· Thermal Resistance (RθJA): 200 °C/W
️· Junction & Storage Temperature (TJ, TSTG): 150°C / -55 to +150°C

3. Electrical Characteristics (TA = 25°C unless otherwise specified):

️· Breakdown Voltages:
- V(BR)CBO: 40V (IC = 100µA, IE = 0)
- V(BR)CEO: 20V (IC = 1mA, IB = 0)
- V(BR)EBO: 60V (IE = 100µA, IC = 0)
️· Cut-off Currents:
- ICBO: ≤1µA (VCB=40V, IE=0)
- ICEO: ≤5µA (VCE=20V, IB=0)
- IEBO: ≤0.1µA (VEB=5V, IC=0)
️· DC Current Gain (hFE):
- hFE (VCE=1V, IC=1mA): ≥290
- hFE (VCE=1V, IC=100mA): ≥300 - 1000
- hFE (VCE=10V, IC=300mA): ≥300
️· Collector-Emitter Saturation Voltage (VCE(sat)): ≤0.55V (IC = 600mA, IB = 20mA)
️· Transition Frequency (fT): ≥100 MHz (VCE=10V, IE=50mA, f=30MHz)

4. Pinout (TO-92):

️· 1: Emitter
️· 2: Collector
️· 3: Base

5. Revision & Date
️· Rev.A 29-May-2012



In essence, this datasheet details the electrical and physical specifications of a small signal NPN transistor suitable for various amplification and switching applications.