18/4/10 Datasheet(PDF) - HVV0912-150 - HVVi Semiconductors, Inc.

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18/4/10 Datenblatt, PDF

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Gesuchtes Schlüsselwort : '18/4/10' - Total: 9 (1/1) Pages

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
HVVi Semiconductors, In...	HVV0912-150	862Kb/5P	L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10關s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
	HVV1214-025S	225Kb/2P	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty
	HVV1012-060	740Kb/2P	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10關s Pulse, 1% Duty for DME and TCAS Apllications
	HVV1012-100	844Kb/2P	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10關s Pulse, 1% Duty for DME and TCAS Applications
	HVV1214-100	829Kb/5P	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty For Ground Based Radar Applications
	HVV1214-025	677Kb/2P	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty for Ground Based Radar Applications
	HVV1214-075	512Kb/2P	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty for Ground Based Radar Applications
	HVV0405-175	834Kb/5P	UHF Pulsed Power Transistor 400-500 MHz, 300關s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
	HVV1012-250	729Kb/5P	L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10關s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

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