256KX16 Datasheet(PDF) - K6R4016V1D - Samsung semiconductor

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Samsung semiconductor	K6R4016V1D	227Kb/12P	256Kx16 Bit High Speed Static RAM(3.3V Operating)
	K6R4016V1C-C	190Kb/11P	256Kx16 Bit High Speed Static RAM(3.3V Operating)
	K6X4016C3F	131Kb/9P	256Kx16 bit Low Power full CMOS Static RAM
	K6R4016C1C-C	184Kb/11P	256Kx16 Bit High Speed Static RAM(5V Operating).
	KM23C4100DT	72Kb/4P	4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
	KM6164000B	151Kb/9P	256Kx16 bit Low Power CMOS Static RAM
	K6T4016C3B	149Kb/9P	256Kx16 bit Low Power CMOS Static RAM
	K6X4016T3F	138Kb/9P	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
	K6T4016V3C	154Kb/9P	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
	K6F4016U6G	180Kb/9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F4016U4G	173Kb/9P	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6R4016C1D	139Kb/12P	256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
	K5A3X40YTC	867Kb/45P	Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

256KX16 Datenblatt, PDF