| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Samsung semiconductor
|
K6R4004C1C-C |
155Kb/8P |
1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-C |
184Kb/11P |
256Kx16 Bit High Speed Static RAM(5V Operating). |
| KMM53232004BK |
420Kb/19P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM5324004BSW |
401Kb/19P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM53216000BK |
364Kb/18P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232000BK |
376Kb/18P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM5322104CKU |
274Kb/15P |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V |
| KMM5322204C2W |
287Kb/17P |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM53216004CK |
445Kb/21P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232004CK |
459Kb/21P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM5322200C2W |
280Kb/17P |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| KMM5324000BSW |
357Kb/18P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5324004CSW |
435Kb/21P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328004CSW |
440Kb/21P |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| K6R1004C1A |
127Kb/8P |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out |
| KMM5328004BSW |
406Kb/19P |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM53216000CK |
397Kb/20P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53216004BK |
409Kb/19P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53232000CK |
412Kb/20P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| KMM53632000BK |
389Kb/18P |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |