| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Toshiba Semiconductor
|
25J4B41 |
193Kb/1P |
RECTIFIER STACK (BRIDGE) |
| 10B4B41 |
117Kb/1P |
RECTIFIER STACK (BRIDGE) |
| 25B4B41 |
193Kb/1P |
RECTIFIER STACK (BRIDGE) |
| 1B4B41 |
44Kb/2P |
SILICON DIFFUSED TYPE RECTIFIER STACK |
| 5DG2Z41 |
118Kb/1P |
RECTIFIER STACK (HIGH-SPEED CENTER TAP ) |
| 1B4B42 |
132Kb/2P |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
| 1Q4B42 |
74Kb/1P |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APLICATIONS) |
| 10FWJ2C42 |
133Kb/2P |
SCHOTTKY BARRIER RECTIFIER STACK (HIGH SPEED RECTIFIER APPLICATIONS) |
| 5FWJ2C48M |
268Kb/5P |
Toshiba Schottky Barrier Rectifier Stack, Schottky Barrier Type |
| 16FWJ2C42 |
175Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK (HIGH SPEED RECTIFIER APPLICATIONS) |
| 10JL2CZ47A |
137Kb/2P |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
| 16DL2DZ47A |
195Kb/3P |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
| 16DL2CZ47A |
177Kb/4P |
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
| 16DL2C41A |
159Kb/2P |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER SUPPLY APPICATION) |
| 16GWJ2C42 |
175Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION.) |
| 20FWJ2C48M |
178Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK(SWITCHING TYPE POWER SUPPLY APPLICATION) |
| 20FWJ2CZ47M |
171Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
| U20DL2C53A |
132Kb/4P |
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| 10GWJ2C48C |
183Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
| 10GWJ2CZ47C |
174Kb/3P |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |