| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Vishay Siliconix
|
VSKDS301 |
132Kb/7P |
Schottky Rectifier, 150 A 11-Mar-11 |
| MP30 |
83Kb/2P |
Power Rheostats 150 Watt Revision 25-Aug-00 |
| VSKDS301 |
115Kb/6P |
Schottky Rectifier, 150 A Revision: 24-Apr-08 |
| VSKDS303 |
156Kb/6P |
Schottky Rectifier, 150 A Revision: 24-Apr-08 |
| VS-GB150YG120NT |
385Kb/9P |
IGBT ECONO3 Module, 150 A |
| VS-GT150YG120NT |
378Kb/9P |
IGBT ECONO 3 Module, 150 A 01-Jan-2023 |
| VS-GT150YG120NT |
378Kb/9P |
IGBT ECONO 3 Module, 150 AS 01-Jan-2022 |
| SI7430DP |
114Kb/7P |
N-Channel 150-V (D-S) WFET Rev. A, 24-Jul-06 |
| SI2325DS |
89Kb/6P |
P-Channel 150-V (D-S) MOSFET S-42449-Rev. A, 10-Jan-05 |
| SI3440DV |
99Kb/6P |
N-Channel 150-V (D-S) MOSFET Rev. C, 08-Sep-08 |
| SI3437DV |
199Kb/12P |
P-Channel 150-V (D-S) MOSFET Rev. B, 04-May-09 |
| SIR5710DP |
182Kb/7P |
N-Channel 150 V (D-S) MOSFET 01-Jan-2022 |
| SIR578DP |
242Kb/9P |
N-Channel 150 V (D-S) MOSFET 01-Jan-2022 |
| SI7115DN |
547Kb/13P |
P-Channel 150 V (D-S) MOSFET 01-Jan-2022 |
| SIS888DN |
178Kb/9P |
N-Channel 150 V (D-S) MOSFET 01-Jan-2022 |
| SUP80090E |
181Kb/8P |
N-Channel 150 V (D-S) MOSFET 01-Jan-2022 |
| SIP21106 |
679Kb/19P |
150-mA Low Noise, Low Dropout Regulator 01-Jan-2022 |
| NTCALUG01T |
111Kb/3P |
NTC Thermistors, Standard Lug Sensors, 150 째C 01-Jan-2022 |
| SI7898DP |
48Kb/5P |
N-Channel 150-V (D-S) MOSFET Rev. A, 17-Jun-02 |
| SI4472DY-T1-E3 |
253Kb/10P |
N-Channel 150 V (D-S) MOSFET Rev. C, 14-Feb-11 |