| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Cypress Semiconductor
|
PAL20V8 |
287Kb/13P |
Flash Erasable, Reprogrammable CMOS PAL Device |
| PALCE16V8 |
300Kb/13P |
Flash-Erasable Reprogrammable CMOS PAL Device |
| PALCE22V10 |
387Kb/13P |
Flash Erasable, Reprogrammable CMOS PAL짰 Device |
| 5962-8867004LA |
337Kb/12P |
Flash Erasable, Reprogrammable CMOS PAL Device |
| PALC22V10D |
328Kb/12P |
Flash Erasable, Reprogrammable CMOS PAL짰 Device |
| PALCE20V8 |
316Kb/14P |
Flash-Erasable Reprogrammable CMOS PAL짰 Device |
| PALCE22V10 |
350Kb/13P |
Flash-erasable Reprogrammable CMOS PAL Device |
| PALCE20V8 |
352Kb/14P |
Flash Erasable, Reprogrammable CMOS PAL Device |

Texas Instruments
|
TMS28F010A |
328Kb/22P |
1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS29F256 |
997Kb/18P |
262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |

Xicor Inc.
|
X2816AM |
373Kb/8P |
Electrically Erasable PROM |
| X2402PI |
327Kb/10P |
Electrically Erasable PROM |

National Semiconductor ...
|
NMC93C56 |
290Kb/8P |
Electrically Erasable Programmable Memories |

List of Unclassifed Man...
|
SC22101 |
309Kb/5P |
ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES |
| 5962-9314401MZC |
266Kb/27P |
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE CMOS, UV ERASABLE MONOLITHIC SILICON |

ATMEL Corporation
|
ATF16V8C |
958Kb/24P |
High Performance Electrically-Erasable PLD |

National Semiconductor ...
|
NMC9314B |
168Kb/5P |
SERIAL ELECTRICALLY ERASABLE PROGRAMMABLE MEMORY |

Rohm
|
BR24L32 |
443Kb/26P |
4k횞8 bit electrically erasable PROM |
| BR24L16 |
390Kb/26P |
2k횞8 bit electrically erasable PROM |
| BR24L04-W |
388Kb/25P |
512횞8 bit electrically erasable PROM |