LED..B..W Datasheet(PDF) - PTVA092407NF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
WOLFSPEED, INC.	PTVA092407NF	708Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz Rev. 03.2, 2022-02-13
	PXAD184218FV	1Mb/9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-26
	PXAE183708NB	667Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Rev. 04, 2022-12-20
	PXAE213708NB	707Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20
	PXFC192207FH	763Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Rev. 07, 2023-06-28
	PTRA082808NF	677Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
	PTVA101K02EV	511Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
	PTVA127002EV	691Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10
	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	CGHV35120F	837Kb/12P	120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Rev. 1.0, 2022-8-3
	CGHV38375F	1Mb/22P	400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET) Rev. 1.0, 2022-10-12
	PTRA083818NF	708Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27
	PTRA093818NF	685Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz Rev. 06.2, 2022-01-04
	PTRA097008NB	556Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22
	PTVA084007NF	497Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13
	PTVA120251EA	787Kb/14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Rev. 06, 2023-07-10
	PXAE261908NF	568Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24
	CGH27060F	4Mb/12P	60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev. 5.2, 2022-11-11
	CGH27015	3Mb/12P	15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Rev. 4.2, 2022-11-3
	PXAE263708NB	612Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

LED..B..W Datenblatt, PDF

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