Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Toshiba Semiconductor
|
TOSLINK |
1Mb/20P |
Optical Transmission Device |
TPD4162F |
751Kb/15P |
Intelligent Power Device 2020-02-20 |
HN7G02FU |
163Kb/6P |
Multi Chip Discrete Device |
HN7G01FU |
185Kb/5P |
TOSHIBA Multi Chip Discrete Device |
HN2E04F |
335Kb/8P |
TOSHIBA MULTI CHIP DISCRETE DEVICE |
TCD2950D |
235Kb/13P |
Image SensorCCD (charge coupled device) |
TCD2905D |
247Kb/22P |
CCD Image Sensor CCD (charge coupled device) |
TCD102C-1 |
479Kb/10P |
CCD LINEAR IMAGE SENSOR (Charge Coupled Device) |
TC6133AF |
350Kb/10P |
AREA IMAGE SENSOR CCD(Charge Coupled Device) |
TCD2903D |
440Kb/13P |
CCD IMAGE SENSOR CCD(CHARGE COULED DEVICE) |
TCD2560D |
285Kb/15P |
TOSHIBA CCD Image Sensor CCD (charge coupled device) |
TCD1707D |
399Kb/11P |
CCD LINEAR IMAGE SENSOR CCD (CHARGE COUPLED DEVICE) |
TPD4111K |
388Kb/27P |
Power Device High Voltage Monolithic Silicon Power IC |
TCD2703D |
263Kb/13P |
CCD Linear Image Sensor CCD (Charge Coupled Device) |
TPD4124K |
349Kb/23P |
Intelligent Power Device High Voltage Monolithic Silicon Power IC |
TPD4125AK |
343Kb/23P |
Intelligent Power Device High Voltage Monolithic Silicon Power IC |
TPD4125K |
349Kb/23P |
Intelligent Power Device High Voltage Monolithic Silicon Power IC |
HN2E05J |
250Kb/6P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
TCD2000P |
261Kb/11P |
TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device) |
TPD7106F |
635Kb/22P |
TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit 2020-01-16 |