Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
NXP Semiconductors
|
PEMD48 |
126Kb/12P |
NPN/PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓 and R1 = 2.2 k廓, R2 = 47 k廓 Rev. 05-13 April 2010 |
PDTC114EU115 |
717Kb/17P |
NPN resistor-equipped transistors; R1 = 10 k?? R2 = 10 k? Rev. 12-21 December 2011 |
PEMD3-115 |
986Kb/18P |
NPN/PNP resistor-equipped transistors; R1 = 10 k?? R2 = 10 k? Rev. 11-25 September 2013 |
PDTC143XT.215 |
752Kb/17P |
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 10 k? Rev. 11-9 December 2011 |
PQMD12 |
207Kb/13P |
NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k 24 July 2013 |
PDTC124E |
181Kb/14P |
NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓 2004 Aug 17 |
PDTA144W |
188Kb/14P |
PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓 2004 Aug 05 |
PDTA115E |
189Kb/14P |
PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓 2004 Jul 30 |
PDTA124E |
181Kb/14P |
PNP resistor-equipped transistors; R1 = 22 k廓, R2 = 22 k廓 2004 Aug 02 |
PDTC115E |
188Kb/14P |
NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓 2004 Aug 06 |
PDTC123E |
188Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 2004 Aug 06 |
PDTC123J |
181Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13 |
PDTC114EMB |
699Kb/11P |
NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓 Rev. 1-21 June 2012 |
PDTC144V |
147Kb/11P |
NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 10 k廓 Rev. 04-16 November 2009 |
PDTC144W |
189Kb/14P |
NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓 2004 Aug 17 |
PDTA123J |
181Kb/14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 02 |
PDTA123E |
189Kb/14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 2004 Aug 02 |
PDTA143Z |
181Kb/14P |
PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 2004 Aug 05 |
PDTC114E |
181Kb/14P |
NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓 2004 Aug 05 |
PDTC114Y |
181Kb/14P |
NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓 2004 Aug 17 |