Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Skyworks Solutions Inc.
|
SKY66108 |
1Mb/13P |
2.0 V to 3.6 V supply operation |

Analog Devices
|
ADP199 |
1Mb/16P |
3.6 V, 500 mA Logic Controlled REV. 0 |

NXP Semiconductors
|
K60P120M100SF2 |
2Mb/72P |
Voltage range: 1.71 to 3.6 V Rev. 7, 02/2013 |
K60P100M100SF2 |
2Mb/76P |
Voltage range: 1.71 to 3.6 V Rev. 7, 02/2013 |
K60P100M100SF2V2 |
1Mb/80P |
Voltage range: 1.71 to 3.6 V Rev. 3, 6/2013 |

Analog Devices
|
ADM3307E |
425Kb/24P |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Rev. I |

ON Semiconductor
|
NDF03N60ZH |
137Kb/10P |
N-Channel Power MOSFET 600 V, 3.6 July, 2013 ??Rev. 7 |

Analog Devices
|
ADG811YRUZ |
340Kb/16P |
0.5ohm CMOS, 1.65 V to 3.6 V, Quad SPST Switches REV. B |
ADG811 |
392Kb/16P |
0.5 CMOS 1.65 V to 3.6 V Quad SPST Switches REV. A |
ADM3310E |
425Kb/24P |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Rev. I |

NXP Semiconductors
|
SE98A |
915Kb/43P |
DDR memory module temp sensor, 1.7 V to 3.6 V Rev. 04-25 November 2009 |
SE98A |
227Kb/43P |
DDR memory module temp sensor, 1.7 V to 3.6 V Rev. 02-6 August 2009 |

Panasonic Semiconductor
|
MN102H85K |
373Kb/3P |
83 ns (at 3.0 V to 3.6 V, 12 MHz) |

Analog Devices
|
ADM3311E |
425Kb/24P |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Rev. I |

Toshiba Semiconductor
|
TC7PAU04FU |
195Kb/7P |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input |

ON Semiconductor
|
NVCR4LS3D6N08M7A |
390Kb/6P |
MOSFET ??Power, N-Channel 80 V, 3.6 m February, 2022 ??Rev. 0 |

Analog Devices
|
ADM3312E |
425Kb/24P |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Rev. I |
ADM3315E |
425Kb/24P |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Rev. I |

NXP Semiconductors
|
NX3DV221 |
1Mb/19P |
Wide supply voltage range from 2.3 V to 3.6 V Rev. 4-19 June 2013 |

Toshiba Semiconductor
|
TC7PAU04FU |
152Kb/7P |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input |