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GS-065-060-5-T-A Datenblatt (PDF) - GaN Systems Inc.

GS-065-060-5-T-A Datasheet PDF - GaN Systems Inc.
Teilenummer GS-065-060-5-T-A
Download  GS-065-060-5-T-A Download

Filegröße   1078.16 Kbytes
Page   17 Pages
Hersteller  GAN [GaN Systems Inc.]
Direct Link  https://gansystems.com/
Logo GAN - GaN Systems Inc.
Bauteilbeschribung Automotive 650 V GaN E-mode transistor

GS-065-060-5-T-A Datasheet (PDF)

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GS-065-060-5-T-A Datasheet PDF - GaN Systems Inc.

Teilenummer GS-065-060-5-T-A
Download  GS-065-060-5-T-A Click to download

Filegröße   1078.16 Kbytes
Page   17 Pages
Hersteller  GAN [GaN Systems Inc.]
Direct Link  https://gansystems.com/
Logo GAN - GaN Systems Inc.
Bauteilbeschribung Automotive 650 V GaN E-mode transistor

GS-065-060-5-T-A Datenblatt (HTML) - GaN Systems Inc.

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GS-065-060-5-T-A Produktdetails

Features
• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
• 650 V enhancement mode power transistor
• Top-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 9 x 7.6 mm2 PCB footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6+4) compliant

Applications
• On Board Chargers
• Traction Drive
• DC-DC Converters
• Industrial Motor Drives
• Solar Inverters
• Bridgeless Totem Pole PFC

Description
The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-T-A is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.




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