GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access times: 5, 6, 7, and 8ns • Fast clock speed: 100, 83, 66, and 50 MHz • Provide high performance 3-1-1-1 access rate • Fast OE access times: 5 and 6ns • Single 3.3V +10% / -5V power supply • Common data inputs and data outputs • BYTE WRITE ENABLE and GLOBAL WRITE control • Five chip enables for depth expansion and address pipelining • Address, control, input, and output pipelined registers • Internally self-timed WRITE cycle • WRITE pass-through capability • Burst control pins ( interleaved or linear burst sequence) • High density, high speed packages • Low capacitive bus loading • High 30pF output drive capability at rated access time • SNOOZE MODE for reduced power standby • Single cycle disable ( PentiumT M BSRAM compatible )
|