Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
International Rectifier |
IRFP2410
|
147Kb / 8P |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
|
IRF6621
|
254Kb / 9P |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
|
Infineon Technologies A... |
AUIRF1018ES
|
664Kb / 10P |
Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
2015-11-23 |
International Rectifier |
AUIRF2805
|
234Kb / 12P |
ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
|
AUIRF7304Q
|
222Kb / 12P |
Advanced Planar Technology Low On-Resistance
|
AUIRFS3607
|
289Kb / 13P |
Advanced Process Technology Low On-Resistance
|
AUIRF2903ZS
|
235Kb / 14P |
Advanced Process Technology Low On-Resistance
|
AUIRF3315S
|
320Kb / 12P |
Advanced Planar Technology Low On-Resistance
|
AUIRF2807
|
202Kb / 11P |
Advanced Planar Technology, Low On-Resistance
|
AUIRF6215
|
275Kb / 11P |
Advanced Planar Technology Low On-Resistance
|