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2N5301 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer 2N5301
Bauteilbeschribung  POWER TRANSISTORS NPN SILICON
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Hersteller  ONSEMI [ON Semiconductor]
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2N5301 Datenblatt(HTML) 2 Page - ON Semiconductor

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2N5301 2N5302 2N5303
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
2N5301
2N5302
2N5303
VCEO(sus)
40
60
80
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5301
(VCE = 60 Vdc, IB = 0)
2N5302
(VCE = 80 Vdc, IB = 0)
2N5303
ICEO
5.0
5.0
5.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5301
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5302
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5303
ICEX
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N5301
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N5302
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N5303
ICEX
10
10
10
mAdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5301
(VCB = 80 Vdc, IE = 0)
2N5302
(VCB = 80 Vdc, IE = 0)
2N5303
ICBO
1.0
1.0
1.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
ALL TYPES
*(IC = 10 Adc, VCE = 2.0 Vdc)
2N5303
*(IC = 15 Adc, VCE = 2.0 Vdc)
2N5301, 2N5302
*(IC = 20 Adc, VCE = 4.0 Vdc)
2N5303
*(IC = 30 Adc, VCE = 4.0 Vdc)
2N5301, 2N5302
hFE
40
15
15
5.0
5.0
60
60
*Collector–Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
2N5301, 2N5302
(IC = 10 Adc, IB = 1.0 Adc)
2N5303
(IC = 15 Adc, IB = 1.5 Adc)
2N5303
(IC = 20 Adc, IB = 2.0 Adc)
2N5301, 2N5302
(IC = 20 Adc, IB = 4.0 Adc)
2N5303
(IC = 30 Adc, IB = 6.0 Adc)
2N5301, 2N5302
VCE(sat)
0.75
1.0
1.5
2.0
2.0
3.0
Vdc
*Base Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
ALL TYPES
(IC = 15 Adc, IB = 1.5 Adc)
2N5301, 2N5302
(IC = 15 Adc, IB = 1.5 Adc)
2N5303
(IC = 20 Adc, IB = 2.0 Adc)
2N5301, 2N5302
(IC = 20 Adc, IB = 4.0 Adc)
2N5303
VBE(sat)
1.7
1.8
2.0
2.5
2.5
Vdc
*Base–Emitter On Voltage (Note 1)
(IC = 10 Adc, VCE = 2.0 Vdc)
2N5303
(IC = 15 Adc, VCE = 2.0 Vdc)
2N5301, 2N5302
(IC = 20 Adc, VCE = 4.0 Vdc)
2N5303
(IC = 30 Adc, VCE = 4.0 Vdc)
2N5301, 2N5302
VBE(on)
1.5
1.7
25
3.0
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
MHz
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
*SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tr
1.0
µs
Storage Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ts
2.0
µs
Fall Time
CC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tf
1.0
µs
* Indicates JEDEC Registered Data.
Note 1: Pulse Width
v 300 µs, Duty Cycle v 2.0%.


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