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Datenblatt-Suchmaschine für elektronische Bauteile |
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STF6N60M2 Datenblatt(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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STF6N60M2 Datenblatt(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 11 page ![]() Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-AmbientRthJA -63 °C/W Maximum Junction-to-Case (Drain) RthJC -0.6 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0.65 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2.5 - 5 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4 A - Ω Forward Transconductance gfs VDS = 30 V, ID = 4 A - -S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - - pF Output Capacitance Coss -- Reverse Transfer Capacitance Crss -- Effective Output Capacitance, Energy Related a Co(er) VDS = 0 V to 520 V, VGS = 0 V - - Effective Output Capacitance, Time Related b Co(tr) - - Total Gate Charge Qg VGS = 10 V ID = 4 A, VDS = 520 V - nC Gate-Source Charge Qgs - - Gate-Drain Charge Qgd - Turn-On Delay Time td(on) VDD = 520 V, ID = 4 A, VGS = 10 V, Rg = 9.1 Ω - ns Rise Time tr - Turn-Off Delay Time td(off) - Fall Time tf - Gate Input Resistance Rg f = 1 MHz, open drain - 3.5 - Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- A Pulsed Diode Forward Current ISM -- Diode Forward Voltage VSD TJ = 25 °C, IS = 4 A, VGS = 0 V - - 1.5 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V - 190 - ns Reverse Recovery Charge Qrr - 2.3 - μC Reverse Recovery Current IRRM - - A S D G 15 - 45 62 25 2.0 2.7 - - - - 25 55 70 40 7 18 10 1. 1 860 120 - STF6N60M2 2 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw |
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Ähnliche Beschreibung - STF6N60M2 |
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