DESCRIPTION

D

G

S

The FTK2306 uses advanced trench

low gate charge and operation with gate

voltages as low as 2.5V.

Schematic diag ram

GENERAL FEATURES

1

3

2

G

D

S

● V

= 30V,I

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

AOH

FTK2306

SOT-23

Ø180mm

8 mm

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

5

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

20

A

Maximum Power Dissipation

1.38

W

Operating Junction and Storage Temperature Range

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

90

/W

℃

ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

μA

30

V

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

μA

0.5

1.2

V

50

m

Ω

35

m

Ω

Drain-Source On-State Resistance

30

m

Ω

Forward Transconductance

13

S

DS

< 50m

Ω @ V

< 35m

Ω @ V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assi g nment

Application

●Battery protection

●Load switch

●Power management

SOT-23 top view

FTK2306

2012. 02. 09

1/4

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 2

AOH