DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

660

1050

PF

lss

Output Capacitance

90

PF

V

=25V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

70

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

6

nS

d(on)

Turn-on Rise Time

20

nS

V

=15V,I

DS

D

Turn-Off Delay Time

20

nS

=5A

V

=10V,R

Turn-Off Fall Time

GS

Ω

Ω

3

nS

Total Gate Charge

Q

8.5

15

nC

g

Gate-Source Charge

1.5

nC

V

=16V,I

Gate-Drain Charge

DS

3.2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V

=0V,I =1.2A

1.2

V

SD

GS

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V

IN

V

OUT

10%

10%

50%

50%

PULSE WIDTH

INVERTED

t

d(on)

90%

t

r

t

on

90%

10%

t

off

t

d(off)

t

f

90%

V

IN

V

OUT

10%

10%

50%

50%

PULSE WIDTH

INVERTED

t

d(on)

90%

90%

t

r

t

on

90%

10%

t

off

t

d(off)

t

f

90%

Vgs

Rgen

Vin

G

Vdd

Rl

Vout

S

D

Figure 2:Switching Waveforms

Figure 1: Switching Test Circuit

Square Wave Pluse Duration(sec)

Figure 3: Normalized Maximum

Transient Thermal Impedance

2012. 02. 09

2/4

Revision No : 2

FTK2306