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STM32H747AI Datenblatt(PDF) 127 Page - STMicroelectronics |
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STM32H747AI Datenblatt(HTML) 127 Page - STMicroelectronics |
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127 / 252 page ![]() DS12930 Rev 1 117/242 STM32H747xI/G Electrical characteristics 221 Table 44. Typical and maximum current consumption in Sleep mode, LDO regulator (1) Symbol Parameter Conditions fHCLK (MHz) Typ Max(2) Unit Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (Sleep) Supply current in Sleep mode All peripherals disabled VOS0 480 50.7 96.3 253.4 366.1 mA 400 43.4 87.8 245.5 357.9 VOS1 400 35.3 66.5 181.3 265.8 379.6 300 27.9 - - - - VOS2 300 24.6 47.3 139.1 207.3 300.4 200 18.8 - - - - VOS3 200 16.5 33.6 106.4 160.9 236.1 All peripherals enabled VOS0 480 136.0 194.7 348.5 464.4 400 115.0 169.0 325.9 441.7 VOS1 400 97.7 138.2 251.3 338.4 456.4 300 74.9 - - - - VOS2 300 67.3 95.8 187.6 257.9 354.1 200 52.8 - - - - VOS3 200 47.1 69.3 141.4 197.7 275.1 1. The parameters given in the above table for the SMPS regulator are derived by extrapolation from the LDO consumption and typical SMPS efficiency factors . 2. Guaranteed by characterization results, unless otherwise specified. Table 45. Typical and maximum current consumption in Sleep mode, SMPS regulator(1) Symbol Parameter Conditions fHCLK (MHz) Typ Max Unit Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (Sleep) Supply current in Sleep mode All peripherals disabled VOS1 400 15.93 29.69 79.01 118.72 173.80 mA 300 12.58 - - - - VOS2 300 10.21 19.63 56.46 82.14 123.46 200 7.89 - - - - VOS3 200 6.50 12.98 39.73 59.35 87.10 All peripherals Enabled VOS1 400 42.65 59.62 110.88 153.00 211.65 VOS2 300 27.70 38.94 75.26 102.22 147.38 VOS3 200 17.95 26.14 52.75 72.95 104.09 1. The parameters given in the above table for the SMPS regulator are derived by extrapolation from the LDO consumption and typical SMPS efficiency factors . |
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