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SCIMX6DP6AVT2AB Datenblatt(PDF) 107 Page - NXP Semiconductors |
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SCIMX6DP6AVT2AB Datenblatt(HTML) 107 Page - NXP Semiconductors |
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107 / 168 page ![]() Electrical Characteristics i.MX 6DualPlus/6QuadPlus Applications Processors Consumer Products, Rev. 3, 11/2018 NXP Semiconductors 107 4.12.11 LVDS Display Bridge (LDB) Module Parameters The LVDS interface complies with TIA/EIA 644-A standard. For more details, see TIA/EIA STANDARD 644-A, “Electrical Characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits.” 4.12.12 MIPI D-PHY Timing Parameters This section describes MIPI D-PHY electrical specifications, compliant with MIPI CSI-2 version 1.0, D-PHY specification Rev. 1.0 (for MIPI sensor port x4 lanes) and MIPI DSI Version 1.01, and D-PHY specification Rev. 1.0 (and also DPI version 2.0, DBI version 2.0, DSC version 1.0a at protocol layer) (for MIPI display port x2 lanes). 4.12.12.1 Electrical and Timing Information Table 67. LVDS Display Bridge (LDB) Electrical Specification Parameter Symbol Test Condition Min Max Units Differential Voltage Output Voltage VOD 100 Ω Differential load 250 450 mV Output Voltage High Voh 100 Ω differential load (0 V Diff—Output High Voltage static) 1.25 1.6 V Output Voltage Low Vol 100 Ω differential load (0 V Diff—Output Low Voltage static) 0.9 1.25 V Offset Static Voltage VOS Two 49.9 Ω resistors in series between N-P terminal, with output in either Zero or One state, the voltage measured between the 2 resistors. 1.15 1.375 V VOS Differential VOSDIFF Difference in VOS between a One and a Zero state -50 50 mV Output short-circuited to GND ISA ISB With the output common shorted to GND -24 24 mA VT Full Load Test VTLoad 100 Ω Differential load with a 3.74 kΩ load between GND and I/O supply voltage 247 454 mV Table 68. Electrical and Timing Information Symbol Parameters Test Conditions Min Typ Max Unit Input DC Specifications—Apply to DSI_CLK_P/_N and DSI_DATA_P/_N Inputs VI Input signal voltage range Transient voltage range is limited from -300 mV to 1600 mV -50 — 1350 mV VLEAK Input leakage current VGNDSH(min) = VI = VGNDSH(max) + VOH(absmax) Lane module in LP Receive Mode -10 — 10 mA VGNDSH Ground Shift — -50 — 50 mV VOH(absmax) Maximum transient output voltage level —— — 1.45 V tvoh(absmax) Maximum transient time above VOH(absmax) —— — 20 ns |
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